M93C86-x M93C76-x M93C66-x M93C56-x M93C46-x 16-Kbit, 8-Kbit, 4-Kbit, 2-Kbit and 1-Kbit (8-bit or 16-bit wide) MICROWIRE serial access EEPROM Datasheet - production data READY/BUSY signal during programming 2 MHz clock rate Sequential read operation Enhanced ESD/latch-up behavior More than 4 million write cycles PDIP8 (BN) More than 200-year data retention Packages SO8, TSSOP8, UFDFPN8 packages: RoHS-compliant and Halogen-free (ECOPACK) PDIP8 package: SO8 (MN) RoHS-compliant (ECOPACK1) 150 mil width Table 1. Device summary Part Memory Supply Reference number size voltage TSSOP8 (DW) M93C46-W 2.5 V to 5.5 V 169 mil width M93C46-x 1 Kbit M93C46-R 1.8 V to 5.5 V M93C56-W 2.5 V to 5.5 V M93C56-x 2 Kbit M93C56-R 1.8 V to 5.5 V M93C66-W 2.5 V to 5.5 V M93C66-x 4 Kbit UFDFPN8 (MC) M93C66-R 1.8 V to 5.5 V 2 x 3 mm - M93C76-R 8 Kbit 1.8 V to 5.5 V M93C86-W 2.5 V to 5.5 V M93C86-x 16 Kbit M93C86-R 1.8 V to 5.5 V Features Industry standard MICROWIRE bus Single supply voltage: 2.5 V to 5.5 V for M93Cx6-W 1.8 V to 5.5 V for M93Cx6-R Dual organization: by word (x16) or byte (x8) Programming instructions that work on: byte, word or entire memory Self-timed programming cycle with auto-erase: 5 ms November 2013 DocID4997 Rev 15 1/33 This is information on a product in full production. www.st.comContents M93C86-x M93C76-R M93C66-x M93C56-x M93C46-x Contents 1 Description . 6 2 Connecting to the serial bus 8 3 Operating features 9 3.1 Supply voltage (V ) . 9 CC 3.1.1 Operating supply voltage (V ) 9 CC 3.1.2 Power-up conditions 9 3.1.3 Power-up and device reset . 9 3.1.4 Power-down . 9 4 Memory organization . 10 5 Instructions . 11 5.1 Read Data from Memory . 13 5.2 Erase and Write data 13 5.2.1 Write Enable and Write Disable . 13 5.2.2 Write . 13 5.2.3 Write All . 15 5.2.4 Erase Byte or Word 16 5.2.5 Erase All 16 6READY/BUSY status 17 7 Initial delivery state . 17 8 Clock pulse counter 18 9 Maximum ratings . 19 10 DC and AC parameters 20 11 Package mechanical data 26 12 Part numbering 30 2/33 DocID4997 Rev 15