A2P75S12M3-F Datasheet ACEPACK 2 sixpack topology, 1200 V, 75 A trench gate field-stop IGBT M series, soft diode and NTC Features ACEPACK 2 power module DBC Cu Al O Cu 2 3 Sixpack topology 1200 V, 75 A IGBTs and diodes Soft and fast recovery diode Integrated NTC ACEPACK 2 Applications Inverters Industrial Motor drives Description This power module is a sixpack topology in an ACEPACK 2 package with NTC, integrating the advanced trench gate field-stop technologies from STMicroelectronics. This new IGBT technology represents the best compromise between conduction and switching loss, to maximize the efficiency of any converter system up to 20 kHz. Product status A2P75S12M3-F Product summary Order code A2P75S12M3-F Marking A2P75S12M3-F Package ACEPACK 2 Leads type Press fit contact pins DS11656 - Rev 5 - January 2019 www.st.com For further information contact your local STMicroelectronics sales office.A2P75S12M3-F Electrical ratings 1 Electrical ratings 1.1 IGBT Limiting values at T = 25 C, unless otherwise specified. J Table 1. Absolute maximum ratings of the IGBT Symbol Parameter Value Unit V Collector-emitter voltage (V = 0) 1200 V CES GE I Continuous collector current (T = 100 C) 75 A C C (1) I Pulsed collector current (t = 1 ms) 150 A p CP V Gate-emitter voltage 20 V GE P Total power dissipation of each IGBT (T = 25 C, T = 175 C) 454.5 W TOT C J T Maximum junction temperature 175 C JMAX T Operating junction temperature range under switching conditions -40 to 150 C Jop 1. Pulse width limited by maximum junction temperature. Table 2. Electrical characteristics of the IGBT Symbol Parameter Test conditions Min. Typ. Max. Unit Collector-emitter V I = 1 mA, V = 0 V 1200 V (BR)CES C GE breakdown voltage V = 15 V, I = 75 A 1.95 2.3 GE C V CE(sat) Collector-emitter V V = 15 V, I = 75 A, saturation voltage GE C (terminal) 2.3 T = 150 C J V V = V , I = 1 mA Gate threshold voltage 5 6 7 V GE(th) CE GE C I Collector cut-off current V = 0 V, V = 1200 V 100 A CES GE CE Gate-emitter leakage I V = 0 V, V = 20 V 500 nA GES CE GE current C Input capacitance 4700 pF ies C Output capacitance 350 pF oes V = 25 V, f = 1 MHz, V = 0 V CE GE Reverse transfer C 190 pF res capacitance Q Total gate charge V = 960 V, I = 75 A, V = 15 V 350 nC g CC C GE t Turn-on delay time 198 ns d(on) V = 600 V, I = 75 A, R = 10 , CC C G t Current rise time 32 ns r V = 15 V, di/dt = 1900 A/s GE Turn-on switching (1) E 3.59 mJ on energy DS11656 - Rev 5 page 2/14