ACST10 Overvoltage protected AC switch Datasheet - production data Description OUT The ACST10 series belongs to the ACS/ACST power switch family built with A.S.D. (application specific discrete) technology. This high performance device is suited to home appliances G or industrial systems, and drives loads up to 10 A. G OUT OUT COM COM This ACST10 switch has a Triac structure and a high voltage clamping device to absorb the TO-220FPAB TO-220AB inductive turn-off energy and withstand transients such as those described in the IEC 61000-4-5 standard. The ACST1010-7 needs a low gate current to be activated (I < 10 mA) and still GT shows a high noise immunity complying with IEC Features 61000-4-4 standard. The ACST1035-7 offers a high static dV/dt immunity of 2 kV/s minimum. Triac with overvoltage crowbar protection Low I (< 10 mA) or high immunity GT Figure 1. Functional diagram (I < 35 mA) version GT OUT High noise immunity: static dV/dt > 2000 V/s Provides UL certified insulation rated at 2000 V RMS Benefits Enables equipment to meet IEC 61000-4-5 G High off-state reliability with planar technology COM Need no external overvoltage protection Reduces the power passive component count Table 1. Device summary High immunity against fast transients described in IEC 61000-4-4 standards Symbol Value Unit I 10 A T(RMS) Applications V /V 700 V DRM RRM AC mains static switching in appliance and I 10 or 35 mA GT industrial control systems Drive of medium power AC loads such as: Universal motor of washing machine drum Compressor for fridge or air conditioner September 2016 DocID15237 Rev 4 1/14 This is information on a product in full production. www.st.comCharacteristics ACST10 1 Characteristics Table 2. Absolute ratings (limiting values) Symbol Parameter Value Unit TO-220AB T = 105 C c I On-state RMS current (full sine wave) 10 A T(RMS) TO-220FPAB T = 84 C c F = 60 Hz t = 16.7 ms 105 A p Non repetitive surge peak on-state current I TSM T initial = 25 C, (full cycle sine wave) j F = 50 Hz t = 20 ms 100 A p 2 2 2 ItI t for fuse selection t = 10 ms 66 A s p Critical rate of rise on-state current dI/dt F = 120 Hz T = 125 C 100 A/s j I = 2 x I (t 100 ns) G GT, r (1) V Non repetitive line peak pulse voltage T = 25 C 2 kV PP j P Average gate power dissipation T = 125 C 0.1 W G(AV) j P Peak gate power dissipation (t = 20 s) T = 125 C 10 W GM p j I Peak gate current (t = 20 s) T = 125 C 1.6 A GM p j T Storage temperature range -40 to +150 C stg T Operating junction temperature range -40 to +125 C j T Maximum lead solder temperature during 10 ms (at 3 mm from case) 260 C l V Insulation RMS voltage (60 seconds) TO-220FPAB 2000 V INS 1. According to test described in IEC 61000-4-5 standard and Figure 17 Table 3. Electrical characteristics Value Symbol Test conditions Quadrant T Unit j ACST1010-7 ACST1035-7 (1) I V = 12 V, R = 33 I - II - III 25 C MAX. 10 35 mA GT OUT L V V = 12 V, R = 33 I - II - III 25 C MAX. 1.0 V GT OUT L V V = V , R = 3.3 I - II - III 125 C MIN. 0.2 V GD OUT DRM L (2) I I = 500 mA 25 C MAX. 30 50 mA H OUT I I = 1.2 x I I - II - III 25 C MAX. 50 70 mA L G GT (2) dV/dt V = 67 % V , gate open 125 C MIN. 200 2000 V/s OUT DRM (dV/dt)c = 15 V/s 4.4 (2) (dI/dt)c 125 C MIN. A/ms Without snubber 12 V I = 0.1 mA, t = 1 ms 25 C MIN. 850 V CL CL p 1. Minimum I is guaranteed at 5% of I max GT GT 2. For both polarities of OUT pin referenced to COM pin 2/14 DocID15237 Rev 4