BALF-ATM-01E3 STMicroelectronics

BALF-ATM-01E3 50 ohms / matched to ATSAMR21E18 balun transformer, with integrated harmonic filter Datasheet - production data Description The BALF-ATM-01E3 from STMicroelectronics is an integrated balun, which also integrates a matching network in a monolithic glass substrate. Matching impedance has been customized for the ATMEL chip. The device uses STMicroelectronics IPD technology on a non- conductive glass substrate to optimize RF performance. Coated CSP on glass bumpless Figure 1: Pin configuration (pad view) Features BAL+ GND GND 2.4 2.5 GHz balun with integrated matching network Matching optimized for following chipsets: ATSAMR21E18 Low insertion loss BAL- GND SE Low amplitude imbalance Low phase imbalance Coated CSP on glass bumpless PAD VIEW Small footprint 2.5 mm Benefits Very low profile High RF performance PCB space saving versus discrete solution BOM count reduction Efficient manufacturability June 2017 DocID030654 Rev 1 1/12 www.st.com This is information on a product in full production. Characteristics BALF-ATM-01E3 1 Characteristics Table 1: Absolute maximum ratings (limiting values) Value Symbol Parameter Unit Min. Typ. Max. PIN Input power RFIN - 4 dBm ESD ratings MIL STD883C 2000 - (HBM: C = 100 pF, R = 1.5 , air discharge) V V ESD ESD ratings machine model 500 - (MM: C = 200 pF, R = 25 W, L = 500 nH) T Operating temperature -40 - +105 C OP Table 2: Electrical characteristics (Tamb = 25 C) Value Symbol Parameter Unit Min. Typ. Max. ZOUT Nominal differential output impedance Conjugate match to ATSAMR21E18 ZIN Nominal input impedance 50 f Frequency range (bandwidth) 2400 2500 MHz I Insertion loss at 2.45 GHz 0.91 1.3 dB L R Single ended side at 2.45 GHz 15 26.3 dB L RL Differential side at 2.45 GHz 15 26.1 dB 0 imb Phase imbalance at 2.45 GHz -9 9 0 Aimb Amplitude imbalance at 2.45 GHz -0.4 0.4 dB 35 H2 Harmonic 2 attenuation at 4.9 GHz 20 dB H Harmonic 3 attenuation at 7.35 GHz 20 25 dB 3 2/12 DocID030654 Rev 1