Product Information

BTB24-800BWRG

BTB24-800BWRG electronic component of STMicroelectronics

Datasheet
Triac; 800V; 25A; 50mA; THT; Snubberless™; tube; TO220AB

Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 1.3909 ea
Line Total: USD 1.39

46 - Global Stock
Ships to you between
Fri. 17 May to Wed. 22 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
46 - WHS 1


Ships to you between
Fri. 17 May to Wed. 22 May

MOQ : 1
Multiples : 1

Stock Image

BTB24-800BWRG
STMicroelectronics

1 : USD 1.3909
10 : USD 1.2066
50 : USD 1.0911
100 : USD 0.973
500 : USD 0.9192
1000 : USD 0.8961

136 - WHS 2


Ships to you between Fri. 10 May to Thu. 16 May

MOQ : 1
Multiples : 1

Stock Image

BTB24-800BWRG
STMicroelectronics

1 : USD 3.445
3 : USD 3.263
8 : USD 2.145
21 : USD 2.028
1000 : USD 1.95

785 - WHS 3


Ships to you between Fri. 10 May to Thu. 16 May

MOQ : 26
Multiples : 1

Stock Image

BTB24-800BWRG
STMicroelectronics

26 : USD 3.2933
50 : USD 3.2036
100 : USD 3.1395

14826 - WHS 4


Ships to you between Fri. 10 May to Thu. 16 May

MOQ : 5
Multiples : 1

Stock Image

BTB24-800BWRG
STMicroelectronics

5 : USD 1.5815
10 : USD 1.4999
25 : USD 1.4699

     
Manufacturer
Product Category
Non Repetitive On-State Current
Rated Repetitive Off-State Voltage VDRM
Off-State Leakage Current @ VDRM IDRM
On-State Voltage
Holding Current Ih Max
Gate Trigger Voltage - Vgt
Gate Trigger Current - Igt
Maximum Operating Temperature
Minimum Operating Temperature
Package / Case
Series
Mounting Style
Packaging
Hts Code
LoadingGif

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BTA24, BTB24, T25 Datasheet 800 V and 600 V, 25 A standard and Snubberless Triacs A2 Features High current 25 A RMS current Triac Low thermal resistance G High commutation (4 quadrants) or very high commutation (3 quadrants) A1 capability A2 BTA series UL1557 recognized components (file ref: 81734) RoHS (2002/95/EC) compliant packages UL-94, V0 flammability package resin compliance G G A2 A2 A1 A1 TO-220AB TO-220AB Ins. Applications A2 On/off function in static relays, heating regulation, induction motor starting circuits G A2 Phase control operations in light dimmers and motor speed controllers A1 DPAK Description Available either in through-hole or surface-mount packages, the BTA24, BTB24 and T25 are suitable for general purpose AC switching. Product status link TO-220AB BTA24 insulated package TO-220AB BTB24 uninsulated package T25 DPAK package Product summary BTA24 BTB24 T25 I 25 A T(RMS) V /V 600 V and 800 V DRM RRM I GT 35 / 50 mA 35 mA Snubberless I standard 50 mA GT DS2112 - Rev 12 - September 2021 www.st.com For further information contact your local STMicroelectronics sales office.BTA24, BTB24, T25 Characteristics 1 Characteristics Table 1. Absolute maximum ratings Symbol Parameters Value Unit 2 D PAK / T = 100 C c I RMS on-state current (full sine wave) TO-220AB 25 A T(RMS) TO-220AB Ins. T = 75 C c t = 16,7 ms f = 60 Hz 260 p Non repetitive surge peak on-state current (full cycle, I A TSM T initial = 25 C) j t = 20 ms f = 50 Hz 250 p 2 2 2 t = 10 ms 340 I t I t value for fusing p A s Critical rate of rise of on-state current dl/dt f = 120 Hz T = 125 C 50 A/s j I = 2 x I , t 100 ns G GT r V , V + DRM RRM V , V t = 10 ms T = 25 C Non repetitive surge peak off-state voltage V DSM RSM p j 100 V , V T = 25 C Repetitive peak off-state voltage 600 or 800 V DRM RRM j I t = 20 s T = 125 C Peak gate current 4 A GM p j P T = 125 C Average gate power dissipation 1 W G(AV) j T Storage junction temperature range -40 to +150 C stg T Operating junction temperature range -40 to +125 C j T Maximum lead temperature for soldering during 10 s 260 C L V Insulation RMS voltage, 1 minute 2.5 kV INS Table 2. Electrical characteristics (T = 25 C, unless otherwise specified) - Snubberless (3 quadrants) T25, j BTA24-XXXXW, BTB24-XXXXW T25 BTA/BTB Symbol Parameters Quadrant Unit T2535 CW BW (1) I I - II - III Max. 35 35 50 mA GT V = 12 V, R = 33 D L V I - II - III Max. 1.3 V GT V V = V , R = 3.3 k, T = 125 C I - II - III Min. 0.2 V GD D DRM L j (2) I = 500 mA I Max. 50 50 75 mA H T I - III Max. 70 70 80 I I = 1.2 I mA L G GT II Max. 80 80 100 (2) V = 67 % V gate open, T = 125 C Min. 500 500 1000 V/s dV/dt D DRM j (2) Without snubber Min. 13 13 22 A/ms (dI/dt)c 1. Minimum I is guaranteed at 5 % of I max. GT GT 2. For both polarities of A2 referenced to A1 DS2112 - Rev 12 page 2/14

Tariff Desc

8541.50.00 - Other semiconductor devices (not IC) semiconductor devices
C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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