BZW50-27B STMicroelectronics

BZW50-27B electronic component of STMicroelectronics
BZW50-27B STMicroelectronics
BZW50-27B ESD Protection Diodes / TVS Diodes
BZW50-27B  Circuit Protection
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of BZW50-27B ESD Protection Diodes / TVS Diodes across the USA, India, Europe, Australia, and various other global locations. BZW50-27B ESD Protection Diodes / TVS Diodes are a product manufactured by STMicroelectronics. We provide cost-effective solutions for ESD Protection Diodes / TVS Diodes, ensuring timely deliveries around the world.

Part No.BZW50-27B
Manufacturer:STMicroelectronics
Category:ESD Protection Diodes / TVS Diodes
Description:Diode: transil; 5kW; 30V; 103A; bidirectional; R6
Datasheet:BZW50-27B Datasheet (PDF)
Shipping Charges:Click here for details
AI Image
Price (USD)
  
400: USD 1.4248 ea
Line Total: USD 569.92 
Availability : 0
  
QtyUnit Price
400$ 1.4248
500$ 1.4162
700$ 1.402
1000$ 1.388
  

Availability582
Ship by Thu. 25 Jun to Wed. 01 Jul
MOQ : 400
Multiples : 100
QtyUnit Price
400$ 1.4248
500$ 1.4162
700$ 1.402
1000$ 1.388


Availability786
Ship by Tue. 23 Jun to Thu. 25 Jun
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 4.1875
10$ 2.5415
100$ 1.617
500$ 1.507
1000$ 1.441
2500$ 1.43


Availability12
Ship by Tue. 23 Jun to Thu. 25 Jun
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 2.926
8$ 2.618
21$ 2.478


Availability582
Ship by Thu. 25 Jun to Wed. 01 Jul
MOQ : 400
Multiples : 100
QtyUnit Price
400$ 1.4248
500$ 1.4162
700$ 1.402
1000$ 1.388

   
Manufacturer
Product Category
Series
Product Type
Vesd - Voltage ESD Contact
Vesd - Voltage ESD Air Gap
Polarity
Number of Channels
Termination Style
Breakdown Voltage
Working Voltage
Clamping Voltage
Ipp - Peak Pulse Current
Cd - Diode Capacitance
Package / Case
Pppm - Peak Pulse Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Hts Code
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the BZW50-27B from our ESD Protection Diodes / TVS Diodes category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BZW50-27B and other electronic components in the ESD Protection Diodes / TVS Diodes category and beyond.

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BZW50 Datasheet 5 kW TVS Features Peak pulse power: 5000 W (10/1000 s) Stand off voltage range from 10 V to 180 V Unidirectional and bidirectional diode Low clamping factor Fast response time R6 UL497B, file number: QVGQ2.E136224 Description Transil diodes provide high overvoltage protection by clamping action. Their instantaneous response to transient overvoltages makes them particularly suited to protect voltage sensitive devices such as MOS Technology and low voltage supplied ICs. Product status link BZW50 DS0662 - Rev 6 - June 2018 www.st.com For further information contact your local STMicroelectronics sales office. BZW50 Characteristics 1 Characteristics Table 1. Absolute maximum ratings (T = 25 C) amb Symbol Parameter Value Unit (1) P Peak pulse power dissipation 5000 W PP P Power dissipation on infinite heatsink 6.5 W I Non repetitive surge peak forward current for unidirectional types 500 A FSM T Storage temperature range -65 to +175 C stg T Maximum operating junction temperature 175 C op T Maximum lead temperature for soldering during 10 s at 5 mm from case. 260 C L 1. For a surge greater than the maximum values, the diode will fail in short-circuit. Table 2. Thermal resistance parameter Symbol Parameter Value Unit R Junction to leads 15 C/W th(j-l) R Junction to ambient on printed circuit. L = 10 mm 65 C/W th(j-a) lead Figure 1. Electrical characteristics (definitions) II II Symbol Parameter II II PPPP FF Unidirectional V Stand-off voltage RM V Breakdown voltage BR V Clamping voltage CL II RR VV VV VV VV FF VV CLCL BRBR RMRM VV VV VV VV I Leakage current V II RM RM CLCL BRBR RMRM RMRM II RMRM I Peak pulse current II VV VV VV PP RMRM RMRM BRBR CLCL II RR II RR T Voltage temperature coefficient V Forward voltage drop F Bidirectional R Dynamic resistance D II II PPPP PPPP Figure 2. Pulse definition for electrical characteristics DS0662 - Rev 6 page 2/10

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS
C-Max (VA)
SG3
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ST7
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