DVIULC6-2x6 Ultra low capacitance ESD protection Datasheet - production data Low leakage current for longer operation of battery powered devices Higher reliability offered by monolithic integration 500 m pitch for QFN 6 leads Complies with these standards QFN (pin view) DVIULC6-2M6 IEC 61000-4-2 level 4 15 kV air discharge 8 kV contact discharge MIL STD883G-Method 3015-7 Applications Features DVI ports up to 1.65 Gb/s IEEE 1394a, b, and c up to 3.2 Gb/s 2-line ESD protection (at 15 kV air and contact discharge, exceeds IEC 61000-4-2) USB2.0 ports up to 480 Mb/s (high speed), backwards compatible with USB1.1 low and full Protects V when applicable BUS speed Ultra low capacitance: 0.6 pF at F = 825 MHz Ethernet port: 10/100/1000 Mb/s Fast response time compared with varistors SIM card protection Low leakage current: 0.5 A max Video line protection RoHS compliant Description Benefits ESD standards compliance guaranteed at The DVIULC6-2M6 is a monolithic, application device level, hence greater immunity at system specific discrete device dedicated to ESD level protection of high speed interfaces, such as DVI, IEEE 1394a, b and c, USB2.0, Ethernet links and ESD protection of V when applicable. BUS video lines. Large bandwidth to minimize impact on data Its ultra low line capacitance secures a high level signal quality of signal integrity without compromising in Consistent D+ / D- signal balance: protecting sensitive chips against the most Ultra low impact on intra- and inter-pair stringently characterized ESD strikes. skew Matching high bit rate DVI, and IEEE 1394 requirements 2 Low PCB space consumption - 1.45 mm for QFN October 2015 DocID14672 Rev 2 1/15 This is information on a product in full production. www.st.comCharacteristics DVIULC6-2x6 1 Characteristics Figure 1. Functional diagram *1 9 %8 6 , 2 , 2 4)1 OHDGV When used with a DVI application, Pin 5 should not be connected to protect against backdrive current flow on data lines. Table 1. Absolute ratings Symbol Parameter Value Unit IEC61000-4-2 air discharge 15 V Peak pulse voltage IEC61000-4-2 contact discharge 15 kV PP MIL STD883G-Method 3015-7 25 T Storage temperature range -55 to +150 C stg T Maximum junction temperature 125 C j T Lead solder temperature (10 seconds duration) 260 C L Table 2. Electrical characteristics (T = 25 C) amb Value Symbol Parameter Test Conditions Unit Min. Typ. Max I Leakage current V = 5 V 0.5 A RM RM Breakdown voltage between V BUS V I = 1 mA 6 V BR R and GND I = 1 A, t = 8/20 s PP p 12 V Any I/O pin to GND V Clamping voltage CL I = 5 A, t = 8/20 s PP p 17 V Any I/O pin to GND C Capacitance between I/O and GND V = 0 V, F= 825 MHz 0.85 pF i/o-GND R Capacitance variation between I/O C V = 0 V, F= 1 MHz 0.02 pF i/o-GND R and GND C Capacitance between I/O V = 0 V, F= 825 MHz 0.5 pF i/o-i/o R 2/15 DocID14672 Rev 2 , 2 , 2