EMIF03-SIM02F2 3-line IPAD, EMI filter including ESD protection Features EMI symmetrical (I/O) low-pass filter High efficiency in EMI filtering Lead-free package Very low PCB space consuming: 1.42 mm x 1.42 mm Flip Chip (8 bumps) Very thin package: 0.65 mm High efficiency in ESD suppression High reliability offered by monolithic integration Figure 1. Pin configuration (bump side) High reduction of parasitic elements through 3 2 1 integration and wafer level packaging RST RST A ext in Complies with the following standards CLK CLK Gnd IEC 61000-4-2, Level 4 on external and V B cc in ext pins: Data Data VCC C 15 kV (air discharge) in ext 8 kV (contact discharge) IEC 61000-4-2, Level 1 on internal pins: Figure 2. Configuration 2 kV (air discharge) 2 kV (contact discharge) VCC 100 MIL STD 883E - Method 3015-6 Class 3 RST in RST ext R1 47 CLK in CLK ext R2 Applications 100 Data in Data ext R3 EMI filtering and ESD protection for: SIM Interface (Subscriber Identify Module) Cline = 20pF max. GND UIM Interface (Universal Identify Module) Description The EMIF03-SIM02F2 is a highly integrated device designed to suppress EMI/RFI noise in all systems subjected to electromagnetic interference.The EMIF03 Flip Chip packaging means the package size is equal to the die size. This filter includes an ESD protection circuitry which prevents damage to the application when subjected to ESD surges up 15kV. TM: IPAD is a trademark of STMicroelectronics. April 2008 Rev 6 1/8 www.st.com 8Characteristics EMIF03-SIM02F2 1 Characteristics Table 1. Absolute maximum ratings (T = 25 C) amb Symbol Parameter and test conditions Value Unit Internal pins (A3, B3, C3): ESD discharge IEC61000-4-2, air discharge 2 ESD discharge IEC61000-4-2, contact discharge 2 V kV PP External pins (A2, B1, C2, C1): ESD discharge IEC61000-4-2, air discharge 15 8 ESD discharge IEC61000-4-2, contact discharge T Maximum junction temperature 125 C j T Operating temperature range -40 to +85 C op T Storage temperature range -55 to 150 C stg Table 2. Electrical characteristics (T = 25 C) amb Symbol Parameters I V Breakdown voltage BR I Leakage current V IF RM RM V Stand-off voltage RM V Clamping voltage CL V F V V V CL BR RM V IRM R Dynamic impedance d IR I Peak pulse current PP Series resistance between Input & R I PP I/O Output C Input capacitance per line line Symbol Test conditions Min Typ Max Unit V I = 1 mA 6 20 V BR R I V = 3V 0.2 A RM RM R 1.5 d R R Tolerance 20% 100 1, 3 R Tolerance 20% 47 2 C 0V 20 pF line 2/8