EMIF03-SIM02F3 STMicroelectronics

EMIF03-SIM02F3 3-line IPAD, EMI filter including ESD protection Features EMI symmetrical (I/O) low-pass filter High efficiency in EMI filtering Lead-free package 2 Very low PCB space consuming: 1.2 mm Very thin package: 0.60 mm Flip Chip (8 bumps) High efficiency in ESD suppression High reliability offered by monolithic integration Figure 1. Pin configuration (bump side) High reduction of parasitic elements through integration and wafer level packaging 3 2 1 RST RST Complies with the following standards A in ext IEC 61000-4-2 Level 4 on external and V cc CLK CLK Gnd pins: B in ext 15 kV (air discharge) Data Data VCC C 8 kV (contact discharge) in ext IEC 61000-4-2 Level 1on internal pins: 2 kV (air discharge) Figure 2. Configuration 2 kV (contact discharge) VCC MIL STD 883E - Method 3015-6 Class 3 100 RST in RST ext R1 47 Applications CLK in CLK ext R2 100 Data in Data ext EMI filtering and ESD protection for: R3 SIM Interface (subscriber identify module) Cline = 20 pF max. UIM Interface (universal identify module) GND Description The EMIF03-SIM02F3 is a highly integrated device designed to suppress EMI / RFI noise in all systems subjected to electromagnetic interferences. This filter includes an ESD protection circuitry which prevents damage to the application when subjected to ESD surges up to 15 kV. TM: IPAD is a trademark of STMicroelectronics. April 2010 Doc ID 11554 Rev 5 1/9 www.st.com 9Electrical characteristics EMIF03-SIM02F3 1 Electrical characteristics Table 1. Absolute maximum ratings (T = 25 C) amb Symbol Parameter and test conditions Value Unit Internal pins (A3, B3, C3): 2 ESD discharge IEC 61000-4-2, air discharge ESD discharge IEC 61000-4-2, contact discharge 2 V kV PP External pins (A2, B1, C2, C1): ESD discharge IEC 61000-4-2, air discharge 15 ESD discharge IEC 61000-4-2, contact discharge 8 T Maximum junction temperature 125 C j T Operating temperature range -40 to +85 C op T Storage temperature range -55 to 150 C stg Figure 3. Electrical characteristics (definitions) I Symbol Parameter I F V = Breakdown voltage BR I = Leakage current V RM RM V = Stand-off voltage V RM F V = Clamping voltage CL V V V CL BR RM V I = Peak pulse current PP I RM I = Breakdown current I R R V = Forward voltage drop F C = Line capacitance line R = Series resistance between Input and Output I/O I PP Table 2. Electrical characteristics (T = 25 C) amb Symbol Test conditions Min. Typ. Max. Unit V I = 1 mA 6 - 20 V BR R I V = 3 V - - 0.2 A RM RM R -1.5 - d R R Tolerance 20% - 100 - 1, 3 R Tolerance 20% - 47 - 2 C V = 0 V, V = 30 mV, F = 1 MHz - - 20 pF line line osc 2/9 Doc ID 11554 Rev 5