ESDALC6V1M3 STMicroelectronics

ESDALC6V1M3 Dual low capacitance Transil array for ESD protection Features 2 unidirectional, low capacitance Transil diodes Better than IEC 61000-4-2 standard (ESD protection: 11 kV contact discharge) Breakdown voltage V = 6.1 V min BR SOT883 Low diode capacitance (11 pF typ at 0 V) (JEDEC MO-236AA) Low leakage current < 0.5 A 2 Very small PCB area: 0.6 mm RoHS compliant Figure 1. Functional diagram Benefits 22 I/O2 21 21 I/O1 High ESD protection level High integration Suitable for high density boards GNDGND 33 Complies with the following standards IEC61000-4-2 level 4: GNDGND 15 kV (air discharge) Underside view 8 kV (contact discharge) MIL STD 883G-Method 3015-7: class 3B: Description HBM (human body model) The ESDALC6V1M3 is a monolithic array designed to protect 1 line or 2 lines against ESD Applications transients. Where transient overvoltage protection in ESD The device is ideal for applications where both sensitive equipment is required, such as: reduced line capacitance and board space saving Computers are required. Printers Communication systems Cellular phone handsets and accessories Video equipment TM: Transil is a trademark of STMicroelectronics October 2010 Doc ID 11555 Rev 5 1/12 www.st.com 12Characteristics ESDALC6V1M3 1 Characteristics Table 1. Absolute ratings (T = 25 C) amb Symbol Parameter Value Unit IEC 61000-4-2 air discharge 15 Peak pulse V kV PP voltage IEC 61000-4-2 contact discharge 11 (1) P Peak pulse power dissipation (8/20 s) T initial = T 30 W PP j amb I Repetitive peak pulse current (8/20 s) 3 A pp T Operating junction temperature range -40 + 125 C j T Storage temperature range -55 + 150 C stg T Maximum lead temperature for soldering during 10 s 260 C L 1. For a surge greater than the maximum values, the diode will fail in short-circuit. Figure 2. Electrical characteristics (definitions) I Symbol Parameter V = Breakdown voltage BR I F I = Leakage current V RM RM V = Stand-off voltage RM V V = Clamping voltage F CL R = Dynamic impedance d V V V CL BR RM V I = Peak pulse current I PP RM I R I = Breakdown current R T = Voltage temperature coefficient V = Forward voltage drop F Slope = 1/Rd I PP Table 2. Electrical characteristics (T = 25 C) amb Symbol Test condition Min. Typ. Max. Unit V I = 1 mA 6.1 7.2 V BR R I V = 5 V 0.5 A RM RM -4 T I = 1 mA 4.2 10 /C R C V = 0 V, F = 1 MHz, V = 30 mV 11 pF R OSC 2/12 Doc ID 11555 Rev 5