ESDARF02-1BU2 STMicroelectronics

ESDARF02-1BU2 Single-line bidirectional ESD protection for high speed interface Datasheet - production data Description The ESDARF02-1BU2 is a bidirectional single- line TVS diode designed to protect the high- speed data lines or other I/O ports against ESD transients. The device is ideal for applications where both extra low line capacitance and board space saving are required. Figure 1. Functional diagram (top view) 0201 package Pin 1 available in different forms Pin1 Features Bidirectional device Extra low diode capacitance: 0.24 pF Low leakage current 0201 SMD package size compatible 2 Ultra small PCB area: 0.18 mm ECOPACK 2 and RoHS compliant component Complies with the following standards: IEC 61000-4-2 level 4 15 kV (air discharge) 8 kV (contact discharge) Applications Where transient overvoltage protection in ESD sensitive equipment is required, such as: Smartphones, mobile phone and accessories Tablet PCs, netbooks and notebooks Portable multimedia devices and accessories Digital cameras and camcorders Communication and highly integrated systems August 2015 DocID026231 Rev 2 1/9 This is information on a product in full production. www.st.comCharacteristics ESDARF02-1BU2 1 Characteristics Table 1. Absolute maximum ratings (T = 25 C) amb Symbol Parameter Value Unit Peak pulse voltage: V IEC 61000-4-2 contact discharge 8 kV PP IEC 61000-4-2 air discharge 20 P Peak pulse power (8/20 s) 30 W PP I Peak pulse current (8/20 s) 1 A PP T Operating junction temperature range - 40 to +150 C j T Storage temperature range - 65 to +150 C stg T Maximum lead temperature for soldering during 10 s 260 C L Note: For a surge greater than the maximum values, the diode will fail in short-circuit Figure 2. Electrical characteristics (definitions) Symbol Parameter V = Breakdown voltage BR V = Stand-off voltage RM I = Leakage current at V RM RM I = Peak pulse current PP R = Dynamic impedance d T = Voltage temperature coefficient C = Line capacitance line I = Breakdown current R Table 2. Electrical characteristics (values, T = 25 C) amb Symbol Test Condition Min. Typ. Max. Unit V I = 1 mA 6 V BR R I V = 3 V 170 nA RM RM V I = 1 A, 8/20 A 30 V CL PP C F = (200 MHz- 3000 MHz), V = 0 V 0.24 0.35 pF line R 2/9 DocID026231 Rev 2