ESDAVLC5-1BF4 Low clamping, very low capacitance bidirectional single line ESD protection Datasheet - production data Description The ESDAVLC5-1BF4 is a bidirectional single line TVS diode designed to protect the data line or other I/O ports against ESD transients. The device is ideal for applications where both reduced line capacitance and board space saving are required. Figure 1. Functional diagram SDFNDJH Features Low clamping voltage Bidirectional device Low leakage current 0201 package 2 Ultra low PCB area: 0.18 mm ECOPACK 2 compliant component Complies with the following standards IEC 61000-4-2 level 4 (exceed level 4): 30 kV (air discharge) 12 kV (contact discharge) Applications Where transient over voltage protection in ESD sensitive equipment is required, such as: Smartphones, mobile phones and accessories Tablets, PCs, netbooks and notebooks Portable multimedia devices and accessories Digital cameras and camcorders Communication and highly integrated systems October 2015 DocID028245 Rev 1 1/10 This is information on a product in full production. www.st.comCharacteristics ESDAVLC5-1BF4 1 Characteristics Table 1. Absolute maximum ratings Symbol Parameter Value Unit IEC 61000-4-2 contact discharge 12 (1) V Peak pulse voltage kV PP IEC 61000-4-2 air discharge 30 (1) P Peak pulse power (8/20 s) 20 W PP (1) I Peak pulse current (8/20 s) 1.7 A PP T Operating junction temperature range -55 to 150 C j T Storage temperature range -65 to +150 C stg T Maximum lead temperature for soldering during 10 s 260 C L 1. For a surge greater than the maximum values, the diode will fail in short-circuit. Figure 2. Electrical characteristics (definitions) 6 PERO PHWHU UD 3D 9 OWDJH ZQ YR %UHDNGR %5 9 OWDJH &ODPSLQJ YR &/ 9 &/ , /HDNDJH FXUUHQW 9 50 50 9 &/ 9 I YROWDJH 6WDQG RI 50 , HDN SXOVH FXUUHQW 3 33 5 QDPLF UHVLVWDQFH G DWXUH OWDJH WHPSHU R 9 7 6ORSH 5 G , 33 /LQH FDSDFLWDQFH & /,1( Table 2. Electrical characteristics (values, T = 25 C) amb Value Unit Symbol Test conditions Test conditions Min. Typ. Max. V Breakdown voltage I = 1 mA 5.8 8.5 V BR R V Working voltage -5.3 5.3 V RM I Leakage current V = 5.3 V 100 nA RM RM C Line capacitance V = 0 V, F = 1 MHz, V = 30 mV 7 pF LINE LINE OSC V Clamping voltage I = 1.7 A- 8/20 11.7 V CL PP V Clamping voltage IEC 61000-4-2, measured at 30 ns 16.3 V CL TLP measurement (pulse durantion V Clamping voltage 19.2 V CL 100 ns), I = 16 A PP (1) R Dynamic resistance Pulse durantion 100 ns 0.67 D F Cut-off frequency -3dB 1.5 GHz C 1. More information is available in the application note: AN4022, TVS short pulse dynamic resistance measurement and correlation with TVS clamping voltage during ESD. 2/10 DocID028245 Rev 1