ESDAVLC8-1BM2, ESDAVLC8-1BT2 TM Single line low capacitance Transil , transient surge voltage suppressor (TVS) for ESD protection Datasheet - production data Complies with the following standards IEC 61000-4-2 (exceeds level 4) 17 kV (air discharge) 17 kV (contact discharge) MIL STD 883G - Method 3015-7: class 3 Human body model Description The ESDAVLC8-1BM2 (SOD882) and ESDAVLC8-1BT2 (SOD882T) are bidirectional SOD882 SOD882T single-line TVS diodes designed to protect data lines or other I/O ports against ESD transients. These devices are ideal for applications where both printed circuit board space and power Features absorption capability are required. Single line bidirectional protection Figure 1: Functional diagram Breakdown voltage VBR = 8.5 V min. Very low capacitance = 4.5 pF at 0 V Lead-free packages ECOPACK 2 compliant packages I/O1 Applications Where transient overvoltage protection in ESD sensitive equipment is required, such as: Computers I/O2 Printers Communication systems Cellular phone handsets and accessories Video equipment Benefits TM: Transil is a trademark of Very low capacitance for optimized data STMicroelectronics integrity Very low reverse current < 50 nA Low PCB space consumption: 0.6 mm max. High reliability offered by monolithic integration November 2016 DocID16937 Rev 3 1/12 www.st.com This is information on a product in full production. Characteristics ESDAVLC8-1BM2, ESDAVLC8-1BT2 1 Characteristics Table 1: Absolute maximum ratings (Tamb = 25 C) Symbol Parameter Value Unit IEC 61000-4-2: Contact discharge 17 V Peak pulse voltage kV PP Air discharge 17 MIL STD 883G - Method 3015-7: class 3 25 P Peak pulse power 8/20s, T initial = T 30 W PP j amb IPP Peak pulse current 8/20s 1.3 A T Operating junction temperature range -55 to +150 OP Tstg Storage temperature range -65 to +150 C T Maximum lead temperature for soldering during 10 s 260 L Figure 2: Electrical characteristics (definitions) Table 2: Electrical characteristics (Tamb = 25 C) Symbol Test condition Min. Typ. Max. Unit From I/O1 to I/O2, IR = 1 mA direct 14.5 17 VBR V From I/O2 to I/O1, I = 1 mA reverse 8.5 11 R IRM VRM = 3 V 50 nA R Square pulse, I = 1 A, t = 2.5 s 2 d PP P Cline F = 1 MHz, VR = 0 V 4.5 5.5 pF 2/12 DocID16937 Rev 3