Product Information

EVALSTDRV600HB8

EVALSTDRV600HB8 electronic component of STMicroelectronics

Datasheet
Power Management IC Development Tools Demonstration board kit for L638xE and L639x high-voltage gate drivers

Manufacturer: STMicroelectronics
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23: USD 29.4052 ea
Line Total: USD 676.32

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Pack Size: 1
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EVALSTDRV600HB8
STMicroelectronics

1 : USD 36.4173

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EVALSTDRV600HB8
STMicroelectronics

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EVALSTDRV600HB8
STMicroelectronics

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Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Type
Tool Is For Evaluation Of
Input Voltage
Series
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Cnhts
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Mxhts
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EVALSTDRV600HB8 Demonstration board kit for L638xE and L639x high voltage gate Data brief Description The L638xE and L639x are high voltage devices manufactured with the BCD offline technology. They are single chip half-bridge gate drivers for N-channel power MOSFET or IGBT. The high-side (floating) section is designed to stand a voltage rail up to 600 V. The logic inputs are CMOS/TTL compatible down to 3.3 V for the easy interfacing microcontroller and up to 15 V for Features Hall-effect interfaces. Half-bridge configuration The integrated bootstrap diode allows a more compact and cost-effective design, but the use of High voltage rail up to 600 V the external diode is still possible in case of Includes samples of each compatible gate specific requirements. driver in SO8 package The EVALSTDRV600HB8 contains 2 samples in L6385E, L6387E, L6388E, L6389E, the SO8 package for each of the compatible gate L6395, L6398, L6399 drivers, and allows evaluating all of the gate Compatible with MOSFETs/IGBTs in drivers features and functionalities while driving a DPAK, D2PAK, TO-220, TO-220FP half-bridge power stage based on N-channel MOSFETs or IGBTs in several different packages dV/dt transient immunity 50 V/ns in full and with voltage rating up to 600 V. temperature range Essential passive components such as the Integrated bootstrap diode filtering and bootstrap capacitor are already Dedicated high- and low-side driving inputs mounted on the PCB, while the gate driving Compact and simplified layout network shall be populated depending on the selected power switch. Gate drivers in the kit features different functionalities and characteristics Passive components footprints are compatible UVLO on both - high-side and low-side with both SMT and T.H. components, so they Internal deadtime, or no deadtime allow a fast and easy configuration and modification. Interlocking for anti cross-conduction protection Ability to drive asymmetrical half-bridges and switched reluctance motors Active high or active low LIN for single input gate driving April 2017 DocID030583 Rev 1 1/7 For further information contact your local STMicroelectronics sales office. www.st.comSupported devices EVALSTDRV600HB8 1 Supported devices The EVALSTDRV600HB8 board supports several high voltage high- and low-side driver devices all in the SO8 package. Table 1. Supported devices and characteristics Current Part Max. supply 3.3 V compatible UVLO on UVLO on capability Deadtime Interlocking name voltage inputs V V CC BO sink/source 650 mA ON 9.6 V ON 9.5 V L6385ED 17 V NO NO NO 400 mA OFF 8.3 V OFF 8.2 V 650 mA ON 6.0 V L6387ED 17 V NO NO NO YES 400 mA OFF 5.5 V 650 mA ON 9.6 V ON 9.5 V L6388ED 17 V YES 320 ns YES 400 mA OFF 8.3 V OFF 8.2 V 650 mA ON 9.6 V ON 9.5 V L6389ED 17 V YES 470 ns YES 400 mA OFF 8.3 V OFF 8.2 V 430 mA ON 9.5 V ON 8.6 V L6395D 20 V YES NO NO 290 mA OFF 8.8 V OFF 8.0 V 430 mA ON 9.5 V ON 9.0 V (1) L6398D 20 V YES 320 ns YES 290 mA OFF 8.0 V OFF 8.0 V 430 mA ON 9.5 V ON 9.0 V L6399D 20 V YES 320 ns YES 290 mA OFF 8.0 V OFF 8.0 V 1. LIN input active low, allows single input driving configuration. 2/7 DocID030583 Rev 1

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