FERD20H100S Datasheet 100 V, 20 A field-effect rectifier diode A Features K K K A ST advanced rectifier process A Stable leakage current over reverse voltage K A A IPAK K Reduced leakage current A TO-220AB K K Low forward voltage drop High frequency operation A A A A Insulated package TO-220FPAB: DPAK A TO-220FPAB K Insulated voltage: 2000 V sine A RMS ECOPACK2 compliant component Applications Switching diode Notebook adapter LED lighting DC/DC converter MPPT Description The device is based on a proprietary technology that achieves the best in class V /I F R trade-off for a given silicon surface. Product status This 100 V rectifier has been optimized for use in confined casing applications where FERD20H100S both efficiency and thermal performance matter. With a lower dependency of leakage current (I ) and forward voltage (V ) in function R F Product summary of temperature, the thermal runaway risk is reduced. Therefore, it can Symbol Value advantageously replace 100 V Schottky diodes. I F(AV) 20 A V 100 V RRM V (max.) 0.415 V F I (max.) 140 A R T 175 C j(max.) DS11526 - Rev 4 - June 2020 www.st.com For further information contact your local STMicroelectronics sales office.FERD20H100S Characteristics 1 Characteristics Table 1. Absolute ratings (limiting values at 25 C, unless otherwise specified, anode terminals short circuited) Symbol Parameter Value Unit V Repetitive peak reverse voltage 100 V RRM I Forward rms current 40 A F(RMS) TO-220AB, T = 155 C C I DPAK, IPAK Average forward current, = 0.5 square wave 20 A F(AV) TO-220FPAB T = 110 C C DPAK, IPAK 150 I t = 10 ms sinusoidal Surge non repetitive forward current A FSM p TO-220AB, TO-220FPAB 250 T Storage temperature range -65 to +175 C stg (1) T +175 C j Maximum operating junction temperature 1. (dP /dT ) < (1/R ) condition to avoid thermal runaway for a diode on its own heatsink. tot j th(j-a) Table 2. Thermal resistance parameter Symbol Parameter Max. value Unit TO-220AB, DPAK, IPAK 1.0 R Junction to case C/W th(j-c) TO-220FPAB 3.8 Table 3. Static electrical characteristics (anode terminals short circuited) Symbol Parameter Test conditions Min. Typ. Max. Unit T = 25 C - 140 A j V = V R RRM (1) I Reverse leakage current T = 125 C - 8 16 j R mA T = 125 C V = 70 V - 4 7 j R T = 25 C - 0.370 0.415 j I = 2 A F T = 125 C - 0.315 0.365 j T = 25 C - 0.455 0.515 j I = 5 A F (2) T = 125 C V Forward voltage drop - 0.450 0.510 V F j T = 25 C - 0.580 0.655 j I = 10 A F T = 125 C - 0.550 0.605 j T = 125 C I = 20 A - 0.640 0.705 j F 1. Pulse test: t = 5 ms, < 2% p 2. Pulse test: t = 380 s, < 2% p To evaluate the conduction losses, use the following equation: 2 P = 0.415 x I + 0.019 x I F(AV) F (RMS) For more information, please refer to the following application notes related to the power losses : AN604: Calculation of conduction losses in a power rectifier DS11526 - Rev 4 page 2/16