FERD30M45CT STMicroelectronics

FERD30M45C Field effect rectifier Datasheet - production data Description A1 This dual center tap field effect rectifier provides stable leakage current over the full range of K reverse voltage and low forward voltage drop. A2 2 Packaged in TO-220AB, IPAK or D PAK, this device is intended to be used in solar bypass K junction boxes and in switch mode power supplies. Table 1. Device summary A2 A2 A1 K Symbol Value A1 I 2 x 15 A 2 F(AV) TO-220AB D PAK K V 45 V RRM +175 C (up to 200 C forward T j (max) mode only on DPAK) V (typ) 0.35 V F A2 2 I PAK A1 Features Advanced rectifier proprietary process Stable leakage current over reverse voltage Reduce leakage current Low forward voltage drop High frequency operation July 2014 DocID023771 Rev 3 1/10 This is information on a product in full production. www.st.comCharacteristics FERD30M45C 1 Characteristics Table 2. Absolute ratings (limiting values, per diode, at 25 C, unless otherwise specified) Symbol Parameter Value Unit V Repetitive peak reverse voltage 45 V RRM I Forward rms current 30 A F(RMS) T = 155 C c Per diode 15 I Average forward current, = 0.5 A F(AV) Per device 30 T = 155 C c I Surge non repetitive forward current t = 10 ms sinusoidal 250 A FSM p T Storage temperature range -65 to + 175 C stg T Maximum operating junction temperature 175 C j Maximum operating temperature on DPAK T 200 C j (1) (DC forward current without reverse bias, t = 1 hour) dPtot 1 --------------- -------------------------- 1. < condition to avoid thermal runaway for a diode on its own heatsink. dTj Rth()j a Table 3. Thermal resistance Symbol Parameter Value (max) Unit Per diode 1.6 R Junction to case th(j-c) Total 1.05 C/W R Coupling 0.5 th(c) When diodes 1 and 2 are used simultaneously: T (diode 1) = P(diode1) x R (per diode) + P(diode2) x R (c) j th(j-c) th 2/10 DocID023771 Rev 3