FERD40H100SFP STMicroelectronics

FERD40H100S Datasheet 100 V, 40 A field-effect rectifier diode Features A K A ST patented rectifier process Stable leakage current over reverse voltage Low forward voltage drop K High frequency operation ECOPACK 2 compliant A A K A Applications K A TO-220AB TO-220FPAB Adapter Gaming console power supply K Battery charger DC / DC converter K A A DPAK Description This single rectifier is based on a proprietary technology, enabling to achieve the best in class V /I for a given silicon surface. F R 2 Packaged in TO-220AB, TO-220FPAB and D PAK, the FERD40H100S is optimized for use in confined applications where both efficiency and thermal performance are key. With a lower dependency of leakage current (I ) and forward voltage (V ) in R F function of temperature, the thermal runaway risk is reduced. It is highly recommended to be used in adapters and chargers. Product status FERD40H100S Product summary Symbol Value I 40 A F(AV) V 100 V RRM T 175 C j(max.) V 0.325 V F(typ.) DS11576 - Rev 2 - March 2019 www.st.com For further information contact your local STMicroelectronics sales office.FERD40H100S Characteristics 1 Characteristics Table 1. Absolute ratings (limiting values at 25 C, unless otherwise specified, anode terminals short circuited) Symbol Parameter Value Unit V Repetitive peak reverse voltage 100 V RRM I Forward rms current 60 A F(RMS) I Average forward current, = 0.5 square wave 40 A F(AV) I Surge non repetitive forward current t = 10 ms sinusoidal 440 A FSM p T Storage temperature range -65 to +175 C stg (1) T Maximum operating junction temperature +175 C j 1. (dP /dT ) < (1/R ) condition to avoid thermal runaway for a diode on its own heatsink. tot j th(j-a) Table 2. Thermal resistance parameter Symbol Parameter Max. value Unit 2 0.8 TO-220AB, D PAK R Junction to case C/W th(j-c) TO-220FPAB 3.3 Table 3. Static electrical characteristics (anode terminals short circuited) Symbol Parameter Test conditions Min. Typ. Max. Unit T = 25 C - 190 A j V = V R RRM (1) I Reverse leakage current T = 125 C - 12 24 j R mA T = 125 C V = 70 V - 6 12 j R T = 25 C - 0.380 0.430 j I = 4 A F T = 125 C - 0.325 0.375 j T = 25 C - 0.465 0.525 j I = 10 A F (2) V Forward voltage drop T = 125 C - 0.455 0.510 V j F T = 25 C - 0.600 0.675 j I = 20 A F T = 125 C - 0.550 0.600 j T = 125 C I = 40 A - 0.645 0.705 j F 1. Pulse test: t = 5 ms, < 2% p 2. Pulse test: t = 380 s, < 2% p To evaluate the conduction losses, use the following equation: 2 P = 0.420 x I + 0.009 x I F(AV) F (RMS) For more information, please refer to the following application notes related to the power losses : AN604: Calculation of conduction losses in a power rectifier AN4021: Calculation of reverse losses on a power diode DS11576 - Rev 2 page 2/14