X-On Electronics has gained recognition as a prominent supplier of FERD60M45CT Rectifiers across the USA, India, Europe, Australia, and various other global locations. FERD60M45CT Rectifiers are a product manufactured by STMicroelectronics. We provide cost-effective solutions for Rectifiers, ensuring timely deliveries around the world.

FERD60M45CT STMicroelectronics

FERD60M45CT electronic component of STMicroelectronics
FERD60M45CT STMicroelectronics
FERD60M45CT Rectifiers
FERD60M45CT  Semiconductors

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See Product Specifications
Part No. FERD60M45CT
Manufacturer: STMicroelectronics
Category: Rectifiers
Description: STMicroelectronics Rectifiers Field Effect Rectifier
Datasheet: FERD60M45CT Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
10: USD 0.8619 ea
Line Total: USD 8.62 
Availability - 0
MOQ: 10  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Fri. 09 May to Thu. 15 May
MOQ : 1
Multiples : 1
1 : USD 1.2224
10 : USD 0.8275
100 : USD 0.8109
500 : USD 0.8109
1000 : USD 0.8109

0
Ship by Fri. 09 May to Thu. 15 May
MOQ : 1000
Multiples : 1000
1000 : USD 1.0985
2000 : USD 1.0662

0
Ship by Wed. 07 May to Fri. 09 May
MOQ : 1
Multiples : 1
1 : USD 5.5652
10 : USD 2.0155

0
Ship by Wed. 07 May to Fri. 09 May
MOQ : 1
Multiples : 1
1 : USD 1.8525
3 : USD 1.6817
10 : USD 1.4846
13 : USD 1.2087
35 : USD 1.143

0
Ship by Fri. 09 May to Thu. 15 May
MOQ : 10
Multiples : 1
10 : USD 0.8619
100 : USD 0.8109

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Vr - Reverse Voltage
If - Forward Current
Type
Configuration
Vf - Forward Voltage
Max Surge Current
Ir - Reverse Current
Minimum Operating Temperature
Maximum Operating Temperature
Series
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Operating Temperature Range
Product
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Cnhts
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Mxhts
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We are delighted to provide the FERD60M45CT from our Rectifiers category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the FERD60M45CT and other electronic components in the Rectifiers category and beyond.

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FERD60M45C Field effect rectifier Datasheet - production data Description A1 This dual rectifier is based on a proprietary K technology that achieves the best in class V /I F R A2 for a given silicon surface. K Packaged in TO-220AB this device is intended to be used in switch mode power supplies, or automotive applications Table 1. Device summary A2 K A1 I 2 x 30 A F(AV) TO-220AB V 45 V RRM FERD60M45CT V (typ) 0.39 V F Features ST advanced rectifier process Stable leakage current over reverse voltage Low forward voltage drop High frequency operation November 2013 DocID024892 Rev 1 1/7 This is information on a product in full production. www.st.comCharacteristics FERD60M45C 1 Characteristics Table 2. Absolute ratings (limiting values, per diode at 25 C, unless otherwise stated) Symbol Parameter Value Unit V Repetitive peak reverse voltage 45 V RRM I Forward rms current 60 A F(RMS) T =135 C Per diode 30 c I Average forward current, = 0.5 A F(AV) T =120 C Per device 60 c I Surge non repetitive forward current t = 10 ms sinusoidal 275 A FSM p T Storage temperature range -65 to + 175 C stg (1) T Maximum operating junction temperature 175 C j dPtot 1 --------------- -------------------------- 1. condition to avoid thermal runaway for a diode on its own heatsink dTj Rthj a Table 3. Thermal resistances Symbol Parameter Value Unit Per diode 1.6 R Junction to case C/W th (j-c) Total 1.1 R Coupling 0.5 C/W th(c) When the diodes 1 and 2 are used simultaneously: T (diode 1) = P(diode1) x R (Per diode) + P(diode2) x R . j th(j-c) th(c) Table 4. Static electrical characteristics (per diode) Symbol Parameter Test Conditions Min. Typ. Max. Unit T = 25 C 550 A j (1) I Reverse leakage current V = V R R RRM T = 125 C 25 50 mA j T = 25 C 0.41 0.45 j I = 15 A F T = 125 C 0.39 0.425 j (2) V Forward voltage drop V F T = 25 C 0.51 0.55 j I = 30 A F T = 125 C 0.54 0.59 j 1. Pulse test: t = 5 ms, < 2% p 2. Pulse test: t = 380 s, < 2% p To evaluate the conduction losses use the following equation: 2 P = 0.39 x I + 0.0067 I F(AV) F (RMS) 2/7 DocID024892 Rev 1

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN
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