Product Information

LFTVS18-1F3

LFTVS18-1F3 electronic component of STMicroelectronics

Datasheet
TVS Diodes - Transient Voltage Suppressors LO FWD TRANS VLT TRANSIL

Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 1.1248 ea
Line Total: USD 1.12

97 - Global Stock
Ships to you between
Fri. 24 May to Wed. 29 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
97 - WHS 1


Ships to you between
Fri. 24 May to Wed. 29 May

MOQ : 1
Multiples : 1

Stock Image

LFTVS18-1F3
STMicroelectronics

1 : USD 0.6369
10 : USD 0.5866
30 : USD 0.555
100 : USD 0.5227
500 : USD 0.5085
1000 : USD 0.5022

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Series
Product Type
Polarity
Termination Style
Breakdown Voltage
Clamping Voltage
Package / Case
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Capacitance
Dimensions
Brand
Peak Pulse Power Dissipation
Factory Pack Quantity :
Tradename
Cnhts
Hts Code
Mxhts
Pd - Power Dissipation
Subcategory
Taric
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LFTVS18-1F3 Low forward voltage Transil, transient voltage suppressor Datasheet production data Features Strong ESD and EOS protection Very low clamping factor V /V CL BR Unidirectional device Fast response time Flip Chip Very thin package (4 bumps) Very small PCB area RoHS compliant Figure 1. Pin configuration (bump side) Complies with the following standards: A B IEC 61000-4-2 level 4 15 kV (air discharge) 1 8 kV (contact discharge) 2 Description The LFTVS18-1F3 is a single line diode designed specifically for the protection of integrated circuits Figure 2. Device configuration in portable equipment and miniaturized A1 and A2 electronics devices subject to ESD and EOS transient overvoltages. B1 and B2 TM: Transil is a trademark of STMicroelectronics September 2012 Doc ID 14608 Rev 3 1/8 This is information on a product in full production. www.st.com 8Characteristics LFTVS18-1F3 1 Characteristics Table 1. Absolute maximum ratings (T = 25 C) amb Symbol Parameter Test condition Value Unit Peak pulse power dissipation P T initial = T 350 W PP j amb (8/20 s pulse) Non repetitive surge peak forward I t = 10 ms, T initial = T 5A FSM p j amb current T Maximum operating junction temperature 125 C j T Storage temperature range -55 to +150 C stg Figure 3. Electrical characteristics - definitions I I F Symbol Parameter V = Breakdown voltage BR I = Leakage current V RM RM V F V = Stand-off voltage VCLVBR VRM RM V V = Clamping voltage I RM CL I = Peak pulse current PP I = Forward current F V = Forward voltage F Slope: 1/R d R = Dynamic resistance d I PP Table 2. Electrical characteristics - values (T = 25 C) amb Symbol Test conditions Min. Typ. Max. Unit V I = 1 mA 16 V BR R I V = 12 V 250 nA RM RM (1) V I = 1 A 19 V CL PP V I = 850 mA 1.3 V F F C V = 0 V, V = 30 mV, F = 1 MHz 175 pF line R OSC 1. 8 / 20 s pulse waveform 2/8 Doc ID 14608 Rev 3

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS
C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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