Product Information

M29W640FB70N6E

M29W640FB70N6E electronic component of STMicroelectronics

Datasheet
Flash 64 Mbit Boot Block 3V STD Flash

Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

10: USD 1.9305 ea
Line Total: USD 19.3

0 - Global Stock
MOQ: 10  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between Wed. 22 May to Tue. 28 May

MOQ : 10
Multiples : 1

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M29W640FB70N6E
STMicroelectronics

10 : USD 1.9305

     
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M29W640FT M29W640FB 64 Mbit (8Mb x8 or 4Mb x16, Page, Boot Block) 3V Supply Flash Memory Figure 1. Packages Features summary Supply Voltage V = 2.7V to 3.6V for Program, Erase, CC Read V =12 V for Fast Program (optional) PP Asynchronous Random/Page Read Page Width: 4 Words TSOP48 (N) Page Access: 25ns 12 x 20mm Random Access: 60ns, 70ns Programming Time FBGA 10 s per Byte/Word typical 4 Words/8 Bytes Program 135 memory blocks TFBGA48 (ZA) 1 Boot Block and 7 Parameter Blocks, 6x8mm 8 KBytes each (Top or Bottom Location) 127 Main Blocks, 64 KBytes each Program/Erase Controller Electronic Signature Embedded Byte/Word Program algorithms Manufacturer Code: 0020h Program/Erase Suspend and Resume Table 1. Device Codes Read from any Block during Program Root Part Number Device Code Suspend Read and Program another Block during M29W640FT 22EDh Erase Suspend M29W640FB 22FDh Unlock Bypass Program command Faster Production/Batch Programming ECOPACK packages V /WP pin for Fast Program and Write Protect PP Temporary Block Unprotection mode Common Flash Interface 64-bit Security Code Extended Memory Block Extra block used as security block or to store additional information Low power consumption Standby and Automatic Standby 100,000 Program/Erase cycles per block Rev3 December 2005 1/72 www.st.com 1M29W640FT, M29W640FB Contents 1 Summary description 7 2 Signal descriptions . 11 2.1 Address Inputs (A0-A21) 11 2.2 Data Inputs/Outputs (DQ0-DQ7) 11 2.3 Data Inputs/Outputs (DQ8-DQ14) . 11 2.4 Data Input/Output or Address Input (DQ15A1) 11 2.5 Chip Enable (E) . 11 2.6 Output Enable (G) . 11 2.7 Write Enable (W) 12 2.8V /Write Protect (V WP) . 12 PP PP/ 2.9 Reset/Block Temporary Unprotect (RP) 13 2.10 Ready/Busy Output (RB) . 13 2.11 Byte/Word Organization Select (BYTE) 13 2.12V Supply Voltage (2.7V to 3.6V) 13 CC 2.13V Ground 14 SS 3 Bus operations 15 3.1 Bus Read . 15 3.2 Bus Write . 15 3.3 Output Disable . 15 3.4 Standby . 15 3.5 Automatic Standby 16 3.6 Special Bus Operations 16 3.6.1 Electronic Signature . 16 3.6.2 Block Protect and Chip Unprotect . 16 4 Command Interface . 19 4.1 Standard commands . 19 4.1.1 Read/Reset command 19 4.1.2 Auto Select command 19 4.1.3 Read CFI Query command 20 2/72

Tariff Desc

8542.32.00 32 No ..CMOS and MOS Read Only Memory and Programmable Read Only Memory whether erasable or non-erasable (for example, flash memory, EPROM, E2PROM, EAPROM, NOVRAM, ROM and PROM)
C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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