Product Information

M29W800DB70N6E

M29W800DB70N6E electronic component of STMicroelectronics

Datasheet
Flash 1Mx8 or 512Kx16 70ns

Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

15: USD 1.1287 ea
Line Total: USD 16.93

0 - Global Stock
MOQ: 15  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between Thu. 23 May to Wed. 29 May

MOQ : 15
Multiples : 1

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M29W800DB70N6E
STMicroelectronics

15 : USD 1.1287

     
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RoHS - XON
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Supply Voltage - Min
Supply Voltage - Max
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M29W800DT M29W800DB 8 Mbit (1Mb x8 or 512Kb x16, Boot Block) 3V Supply Flash Memory FEATURES SUMMARY SUPPLY VOLTAGE Figure 1. Packages V = 2.7V to 3.6V for Program, Erase CC and Read ACCESS TIMES: 45, 70, 90ns PROGRAMMING TIME 10s per Byte/Word typical 19 MEMORY BLOCKS 1 Boot Block (Top or Bottom Location) SO44 (M) 2 Parameter and 16 Main Blocks PROGRAM/ERASE CONTROLLER Embedded Byte/Word Program algorithms ERASE SUSPEND and RESUME MODES Read and Program another Block during Erase Suspend TSOP48 (N) UNLOCK BYPASS PROGRAM COMMAND 12 x 20mm Faster Production/Batch Programming TEMPORARY BLOCK UNPROTECTION MODE FBGA COMMON FLASH INTERFACE 64 bit Security Code LOW POWER CONSUMPTION TFBGA48 (ZA) Standby and Automatic Standby 6 x 9 mm 100,000 PROGRAM/ERASE CYCLES per BLOCK FBGA ELECTRONIC SIGNATURE Manufacturer Code: 0020h Top Device Code M29W800DT: 22D7h TFBGA48 (ZE) Bottom Device Code M29W800DB: 6 x 8mm 225Bh September 2004 1/42M29W800DT, M29W800DB TABLE OF CONTENTS FEATURES SUMMARY . 1 Figure 1. Packages 1 SUMMARY DESCRIPTION . 5 Figure 2. Logic Diagram 5 Table 1. Signal Names 5 Figure 3. SO Connections . 6 Figure 4. TSOP Connections 6 Figure 5. TFBGA Connections (Top view through package) 7 Figure 6. Block Addresses (x8) . 8 Figure 7. Block Addresses (x16) 9 SIGNAL DESCRIPTIONS . 10 Address Inputs (A0-A18) . 10 Data Inputs/Outputs (DQ0-DQ7) . 10 Data Inputs/Outputs (DQ8-DQ14) 10 Data Input/Output or Address Input (DQ15A-1) 10 Chip Enable (E) 10 Output Enable (G) 10 Write Enable (W) . 10 Reset/Block Temporary Unprotect (RP) 10 Ready/Busy Output (RB) . 10 Byte/Word Organization Select (BYTE) 10 V Supply Voltage . 10 CC V Ground . 10 SS BUS OPERATIONS 11 Bus Read . 11 Bus Write . 11 Output Disable . 11 Standby 11 Automatic Standby 11 Special Bus Operations 11 Electronic Signature . 11 Block Protection and Blocks Unprotection 11 Table 2. Bus Operations, BYTE = V 11 IL Table 3. Bus Operations, BYTE = V 12 IH COMMAND INTERFACE . 12 Read/Reset Command . 12 Auto Select Command . 12 Program Command . 12 Unlock Bypass Command 13 2/42

Tariff Desc

8542.32.00 32 No ..CMOS and MOS Read Only Memory and Programmable Read Only Memory whether erasable or non-erasable (for example, flash memory, EPROM, E2PROM, EAPROM, NOVRAM, ROM and PROM)
C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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