PKC-136RL STMicroelectronics

PKC-136 Application Specific Discretes ASD PEAK CLAMP MAIN PRODUCT CHARACTERISTICS V 160Vdc BR V 700Vdc DRM P 1.5W FEATURES n Protection of the Mosfet in flyback power supply n TRANSIL and blocking diode in a single package BENEFITS n Accurate voltage clamping regardless load n Reduced current loop n Reduced EMI emission n High integration n Fast assembly n Reduced losses in stand by mode DO-15 BASIC CONNECTION Lf Io T Vo D ABSOLUTE MAXIMUM RATINGS (limiting values) Symbol Parameter Value Unit T - 40 to + 150 C stg Storage temperature T 150 C j Junction temperature P 1.5 W Maximum power dissipation Tlead = 90C August 2001 - Ed: 2A 1/5PKC-136 ELECTRICAL CHARACTERISTICS TRANSIL Value Symbol Parameter Test conditions Unit Min. Typ. Max. I T = 25C 1 A RM j Leakage current V = 136V R T =125C 10 j V T = 25C 150 160 170 V BR j Breakdown voltage I = 1mA R pulse test < 50ms R T = 125C 4 d j Dynamical Resistance tp < 500ns between I = 0.5Amps and I = 1.5Amps -4 T 10.8 10 /C Temperature Coefficient V 219 V sCL Surge Clamping Ipp = 2.7Amps voltage 10/1000s CALCULATION OF THE CLAMPING VOLTAGE: In repetitive mode and for low current rating, use the equation (1) and (2) to calculate the breakdown voltage V of the transil versus the operating junction temperature and use the equation (3) to calculate BR the clamping voltage versus the transil current Ipp and the temperature. VT=-()T 25V(25C) (1) BR j BR VT()=V (25C)+ V (2) BR j BR BR V ()T=+V ()T Rd.Ipp (3) CL j BR j ELECTRICAL CHARACTERISTICS DIODE (Tj = 25C unless otherwise specified) Value Symbol Parameter Tests conditions Unit Min. Typ. Max. I 3 A R Reverse leakage current V =V T = 25C R RRM j 320 T = 125C j V 700 V RRM Repetitive Peak Reverse T = 25C j Voltage trr 45 ns Reverse Recovery Time I =1A dI / dt = -50A/s F F V = 30V R V 12 V FP Peak Forward Voltage I =3A T = 25C F j dI / dt = 100A/s F 18 T = 125C j CAPACITANCE Symbol Parameter Typical Value Unit C 35 pF Total Parasitic capacitance 1MHz 30mV 2/5