Product Information

RBO08-40G-TR

RBO08-40G-TR electronic component of STMicroelectronics

Datasheet
ESD Suppressors / TVS Diodes REVERSED BATTERY AND OVERVOLTAGE PROTECTION CIRCUIT (RBO)
Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1

MOQ : 1000
Multiples : 1

Stock Image

RBO08-40G-TR
STMicroelectronics

1000 : USD 0
N/A

Obsolete
0 - WHS 2

MOQ : 1
Multiples : 1

Stock Image

RBO08-40G-TR
STMicroelectronics

1 : USD 3.6214
10 : USD 1.3348
100 : USD 1.1254
500 : USD 1.0519
1000 : USD 0.9282
2000 : USD 0.9137
5000 : USD 0.9137
10000 : USD 0.8792
25000 : USD 0.8446
N/A

Obsolete
0 - WHS 3

MOQ : 1000
Multiples : 1000

Stock Image

RBO08-40G-TR
STMicroelectronics

1000 : USD 1.3222
N/A

Obsolete

Read More Specifications

     
Manufacturer
Product Category
Breakdown Voltage
Case
Mounting
Features Of Semiconductor Devices
Kind Of Package
Type Of Diode
Max Forward Impulse Current
Power Dissipation
Leakage Current
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Additional Infomation About Product

RBO08-40G/T REVERSED BATTERY AND Application Specific Discretes A.S.D. OVERVOLTAGE PROTECTION FEATURES n 8A DIODE TO GUARD AGAINST BATTERY REVERSAL. n NEGATIVE OVERVOLTAGE PROTECTION BY CLAMPING. n COMPLIANT WITH ISO/DTR 7637 STANDARD FOR PULSES 1, 2, 3a and 3b. 2 D PAK n SUITABLE FOR AUTOPROTECTED ALTER- RBO08-40G NATOR ENVIRONMENT. n BREAKDOWN VOLTAGE : 24 V min. n CLAMPING VOLTAGE:40V max. n MONOLITHIC STRUCTURE FOR GREATER RELIABILITY. DESCRIPTION Designed to protect against battery reversal and TO220-AB overvoltages in automotive applications, this RBO08-40T monolithic component offers multiple functions in the same package : D1 : reversed battery protection T1 : clamping against negative overvoltages T2 : Transil function for overvoltage protection. FUNCTIONAL DIAGRAM 3 1 2 TM : TRANSIL and ASD are trademarks of STMicroelectronics. 1/9 October 2003 - Ed: 3RBO08-40G / RBO08-40T ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit I Non repetitive surge peak forward current tp=10ms 80 A FSM (Diode D1) I DC forward current (Diode D1) Tc = 75C 8 A F P Peak pulse power between Input and Output 10/1000 s 600 W PP (Transil T1) see note 1 Tj initial = 25C P Peak pulse power between Pins 3 and 2 (10/1000s) 1500 W PP T Storage temperature range -40to+150 C stg Tj Maximum junction temperature 150 T Maximum lead temperature for soldering during 10 s 260 C L at 4.5mm from case for TO220-AB Note 1 : for a surge greater than the maximum value, the device will fail in short-circuit.. THERMAL RESISTANCE Symbol Parameter Value Unit Rth (j-c) Junction to case RBO08-40M 2.4 C/W RBO08-40T 2.4 D1 I32 I13 1 3 Ipp32 IF T2 T1 IR32 2 IRM 32 VCL31 VBR31 VRM31 V32 V13 VRM 32 VBR 32 VCL32 VF13 IRM31 IR31 3 1 Ipp31 2 2/9

HS Compliance

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS

Stmicroelectronics may also be referenced as

C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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