SD2931-12MR STMicroelectronics

SD2931-12MR Datasheet 150 W 50 V moisture resistant HF/VHF DMOS transistor Features Gold metallization Excellent thermal stability Common source push-pull configuration P = 150 W min. with 14 dB gain 175 MHz OUT M174MR epoxy sealed Thermally enhanced packing for lower junction temperatures G and V sort marked on unit FS GS Moisture resistant package specifically designed to operate in extreme environments 4 1 1. Drain 2. Source Description 3. Gate The SD2931-12MR is a gold metallized N-channel MOS field-effect RF power 4. Source 3 2 transistor. Electrically identical to the standard SD2931 MOSFET, it is used for 50 V DC large signal applications up to 230 MHz. The device is mechanically compatible with the SD2931 but offers better thermal capability (25% lower thermal resistance), representing the best-in-class in transistors for ISM applications, where reliability and ruggedness are critical factors. The SD2931-12MR benefits from the latest generation of environmentally designed packing, ruggedized against cyclic high moisture operation and severe storage conditions. Product status SD2931-12MR Product summary Order code SD2931-12MR Marking SD2931-11MR Package M174 Packing Plastic tray DS9247 - Rev 4 - February 2018 www.st.com/ For further information contact your local STMicroelectronics sales office.SD2931-12MR Electrical data 1 Electrical data 1.1 Maximum ratings T = 25 C CASE Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Drain source voltage 125 V (BR)DSS V Drain-gate voltage (R = 1 M) 125 V DGR GS V Gate-source voltage 40 V GS I Drain current 20 A D P Power dissipation 389 W DISS T Max. operating junction temperature 200 C J T Storage temperature -65 to +150 C STG 1.2 Thermal data Table 2. Thermal data Symbol Parameter Value Unit R Junction-to-case thermal resistance 0.45 C/W thJC DS9247 - Rev 4 page 2/16