SD2933W STMicroelectronics

SD2933 HF/VHF/UHF RF power N-channel MOSFETs Datasheet - production data Features Gold metalization Excellent thermal stability Common source configuration P = 300 W min. with 20 dB gain 30 MHz OUT Thermally enhanced packaging for lower junction temperatures M177 Epoxy sealed Description The SD2933 is a gold metalized N-channel MOS field-effect RF power transistor, intended for use Figure 1. Pin connection in 50 V dc large signal applications up to 150 MHz. Its special low thermal resistance package makes it ideal for ISM applications, where reliability and ruggedness are critical factors. 4 1 5 3 2 1. Drain 3. Gate 2. Source 4, 5. Source Table 1. Device summary Order code Marking Package Packaging (1) SD2933W SD2933 M177 Plastic tray 1. For more details please refer to Chapter 6: Marking, packing and shipping specifications. July 2016 DocID7193 Rev 15 1/16 This is information on a product in full production. www.st.comContents SD2933 Contents 1 Electrical data 3 1.1 Maximum rating . 3 1.2 Thermal data . 3 2 Electrical characteristics . 4 3 Impedance . 5 4 Typical performance (30 MHz) . 6 4.1 Test circuit (30 MHz) 9 5 Package information 12 6 Marking, packing and shipping specifications . 14 7 Revision history . 15 2/16 DocID7193 Rev 15