STB4N62K3, STD4N62K3 N-channel 620 V, 1.7 typ., 3.8 A SuperMESH3 Power MOSFETs in DPAK and DPAK packages Datasheet - production data Features Order codes V R max. I P DS DS(on) D W TAB STB4N62K3 620 V 2 3.8 A 70 W STD4N62K3 TAB 3 3 100% avalanche tested 1 1 Extremely high dv/dt capability DPAK DPAK Gate charge minimized Very low intrinsic capacitance Improved diode reverse recovery characteristics Zener-protected Figure 1. Internal schematic diagram D(2,TAB) Applications Switching applications Description G(1) These SuperMESH3 Power MOSFETs are the result of improvements applied to STMicroelectronics SuperMESH technology, combined with a new optimized vertical structure. These devices boast an extremely low on- resistance, superior dynamic performance and S(3) high avalanche capability, rendering them suitable AM01476v1 for the most demanding applications. Table 1. Device summary Order code Marking Packages Packaging STB4N62K3 DPAK 4N62K3 Tape and reel STD4N62K3 DPAK September 2013 DocID18337 Rev 3 1/22 This is information on a product in full production. www.st.comContents STB4N62K3, STD4N62K3 Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) 6 3 Test circuits 9 4 Package mechanical data 10 5 Packaging mechanical data 18 6 Revision history . 21 2/22 DocID18337 Rev 3