STB55NF03LT4 STMicroelectronics

STP55NF03L STB55NF03L STB55NF03L-1 2 2 N-CHANNEL 30V - 0.01 - 55A TO-220/D PAK/I PAK STripFET II POWER MOSFET TYPE V R I DSS DS(on) D STP55NF03L 30 V <0.013 55 A STB55NF03L 30 V <0.013 55 A STB55NF03L-1 30 V <0.013 55 A TYPICAL R (on) = 0.01 DS 3 3 1 2 OPTIMIZED FOR HIGH SWITCHING 1 OPERATIONS 2 D PAK 2 I PAK LOW GATE CHARGE TO-263 TO-262 LOGIC LEVEL GATE DRIVE 3 DESCRIPTION 2 1 This Power MOSFET is the latest development of STMicroelectronis uniqueSingle Feature Siz TO-220 strip-based process. The resulting transistor shows extremely high packing density for low on- resistance, rugged avalanche characteristics and INTERNAL SCHEMATIC DIAGRAM less critical alignment steps therefore a remark- able manufacturing reproducibility. APPLICATIONS LOW VOLTAGE DC-DC CONVERTERS HIGH CURRENT, HIGH SWITCHING SPEED HIGH EFFICIENCY SWITCHING CIRCUITS ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit V Drain-source Voltage (V = 0) 30 V DS GS V Drain-gate Voltage (R = 20 k) 30 V DGR GS V Gate- source Voltage 16 V GS I Drain Current (continuous) at T = 25C 55 A D C I Drain Current (continuous) at T = 100C 39 A D C I () Drain Current (pulsed) 220 A DM P Total Dissipation at T = 25C 80 W tot C Derating Factor 0.53 W/C T Storage Temperature -60 to 175 C stg T Max. Operating Junction Temperature 175 C j () Pulse width limited by safe operating area. March 2002 1/11 .STP55NF03L STB55NF03L/-1 THERMAL DATA Rthj-case Thermal Resistance Junction-case Max 1.875 C/W Rthj-amb Thermal Resistance Junction-ambient Max 62.5 C/W T Maximum Lead Temperature For Soldering Purpose Typ 300 C l ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise specified) case OFF Symbol Parameter Test Conditions Min. Typ. Max. Unit Drain-source I = 250 A, V = 0 30 V D GS V (BR)DSS Breakdown Voltage Zero Gate Voltage V = Max Rating 1 A I DS DSS Drain Current (V = 0) GS V = Max Rating T = 125C 10 A DS C Gate-body Leakage V = 16V 100 nA GS I GSS Current (V = 0) DS (*) ON Symbol Parameter Test Conditions Min. Typ. Max. Unit V V = V I = 250 A Gate Threshold Voltage 1V GS(th) DS GS D V = 10 V I = 27.5 A Static Drain-source On GS D 0.01 0.013 R DS(on) Resistance V = 4.5 V I = 27.5 A 0.013 0.020 GS D DYNAMIC Symbol Parameter Test Conditions Min. Typ. Max. Unit V > I x R DS D(on) DS(on)max, (*) g Forward Transconductance 30 S fs I = 27.5 A D V = 25V, f = 1 MHz, V = 0 C Input Capacitance 1265 pF iss DS GS C Output Capacitance 435 pF oss Reverse Transfer 115 pF C rss Capacitance 2/11