STD6N62K3 Datasheet N-channel 620 V, 0.95 typ., 5.5 A MDmesh K3 Power MOSFET in DPAK package Features Order codes V R I P DS DS(on) max. D TOT TAB STD6N62K3 620 V 1.2 5.5 A 90 W 100% avalanche tested 3 2 Extremely high dv/dt capability 1 Very low intrinsic capacitance Improved diode reverse recovery characteristics DPAK Zener-protected D(2, TAB) Applications Switching applications G(1) Description This MDmesh K3 Power MOSFET is the result of improvements applied to STMicroelectronics MDmesh technology, combined with a new optimized vertical S(3) AM01475V1 structure. This device boasts an extremely low on-resistance, superior dynamic performance and high avalanche capability, rendering it suitable for the most demanding applications. Product status STD6N62K3 Product summary Order code STD6N62K3 Marking 6N62K3 Package DPAK Packing Tape and reel DS8813 - Rev 2 - April 2018 www.st.com For further information contact your local STMicroelectronics sales office.STD6N62K3 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Drain-source voltage 620 V DS V Gate- source voltage 30 V GS I Drain current (continuous) at T = 25 C 5.5 A D C I Drain current (continuous) at T = 100 C 3 A D C (1) I Drain current (pulsed) 22 A DM P Total dissipation at T = 25 C 90 W TOT C (2) I Avalanche current, repetitive or not-repetitive 5.5 A AR (3) E Single pulse avalanche energy 140 mJ AS ESD Gate-source human body model (R = 1.5 k, C = 100 pF) 2.5 kV (4) Peak diode recovery voltage slope 12 V/ns dv/dt T Storage temperature range stg -55 to 150 C T Operating junction temperature range j 1. Pulse width limited by safe operating area. 2. Pulse width limited by Tj max. 3. Starting Tj = 25 C, I = I , V = 50 V. D AR DD 4. I 5.5 A, di/dt 400 A/s, V = 80% V SD DD (BR)DSS. Table 2. Thermal data Symbol Parameter Value Unit R Thermal resistance junction-case 1.39 C/W thj-case (1) Thermal resistance junction-pcb 50 C/W R thj-pcb 1. When mounted on 1inch FR-4 board, 2 oz Cu. DS8813 - Rev 2 page 2/19