Product Information

STD14NM50NAG

STD14NM50NAG electronic component of STMicroelectronics

Datasheet
MOSFET Automotive-grade N-channel 500 V 0.28 Ohm typ. 12 A MDmesh II Power MOSFET in a DPAK package

Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 4.4266 ea
Line Total: USD 4.43

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - Global Stock


Ships to you between Fri. 03 May to Thu. 09 May

MOQ : 2500
Multiples : 1

Stock Image

STD14NM50NAG
STMicroelectronics

2500 : USD 0.9764
5000 : USD 0.9741

0 - Global Stock


Ships to you between Fri. 03 May to Thu. 09 May

MOQ : 2500
Multiples : 1

Stock Image

STD14NM50NAG
STMicroelectronics

2500 : USD 1.0898

0 - Global Stock


Ships to you between Thu. 09 May to Mon. 13 May

MOQ : 1
Multiples : 1

Stock Image

STD14NM50NAG
STMicroelectronics

1 : USD 4.4266
10 : USD 1.5916
100 : USD 1.2434
500 : USD 1.0246
1000 : USD 0.8077
2500 : USD 0.753

     
Manufacturer
Product Category
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Qualification
Tradename
Configuration
Series
Transistor Type
Brand
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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STD14NM50NAG Datasheet Automotive-grade N-channel 500 V, 0.285 typ., 12 A MDmesh II Power MOSFET in a DPAK package Features V R max. I Order code TAB DS DS(on) D STD14NM50NAG 500 V 0.320 12 A 3 2 1 DPAK AEC-Q101 qualified 100% avalanche tested D(2, TAB) Low input capacitance and gate charge Low gate input resistance Applications G(1) Switching applications Description S(3) AM01475v1 noZen This device is an N-channel Power MOSFET developed using the second generation of MDmesh technology. This revolutionary Power MOSFET associates a vertical structure to the companys strip layout to yield one of the worlds lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. Product status STD14NM50NAG Product summary Order code STD14NM50NAG Marking 14NM50N Package DPAK Packing Tape and reel DS12786 - Rev 2 - March 2019 www.st.com For further information contact your local STMicroelectronics sales office.STD14NM50NAG Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Drain-source voltage 500 V DS V Gate-source voltage 25 V GS I Drain current (continuous) at T = 25 C 12 A D C I Drain current (continuous) at T = 100 C 8 A D C (1) I Drain current (pulsed) 48 A DM P Total power dissipation at T = 25 C 90 W TOT C (2) dv/dt Peak diode recovery voltage slope 15 V/ns T Operating junction temperature range j -55 to 150 C T Storage temperature range stg 1. Pulse width limited by safe operating area. 2. I 12 A, di/dt 400 A/s, V V , V = 80% V . SD DSpeak (BR)DSS DD (BR)DSS Table 2. Thermal data Symbol Parameter Value Unit R Thermal resistance junction-case 1.39 C/W thj-case (1) R Thermal resistance junction-pcb 50 C/W thj-pcb 1. When mounted on 1inch FR-4, 2 Oz copper board. Table 3. Avalanche characteristics Symbol Parameter Value Unit Avalanche current, repetitive or not-repetitive I 4 A AR (pulse width limited by T max) j Single pulse avalanche energy E 172 mJ AS (starting T = 25 C, I = I , V = 50 V) j D AS DD DS12786 - Rev 2 page 2/16

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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