Product Information

DMS3014SFGQ-13

DMS3014SFGQ-13 electronic component of Diodes Incorporated

Datasheet
MOSFET MOSFET BVDSS: 25V-30V
Manufacturer: Diodes Incorporated
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Price (USD)

1: USD 1.1194 ea
Line Total: USD 1.12

2551 - Global Stock
Ships to you between
Mon. 27 May to Wed. 29 May
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
2381 - WHS 1


Ships to you between Mon. 27 May to Wed. 29 May

MOQ : 1
Multiples : 1

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DMS3014SFGQ-13
Diodes Incorporated

1 : USD 0.7705
10 : USD 0.6693
100 : USD 0.4634
500 : USD 0.3876
1000 : USD 0.3301
3000 : USD 0.2817
6000 : USD 0.2668
9000 : USD 0.2565
24000 : USD 0.2484

Read More Specifications

     
Manufacturer
Product Category
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Qualification
Configuration
Transistor Type
Brand
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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Additional Infomation About Product

DMS3014SFGQ 30V N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI3333-8 Product Summary Features and Benefits DIOFET utilizes a unique patented process to monolithically I max D BV R max DSS DS(ON) integrate a MOSFET and a Schottky in a single die to deliver: T = +25C A Low R minimize conduction losses DS(ON) 14.5m V = 10V 9.5A GS Low V reducing the losses due to body diode conduction SD 30V Low Q lower Q of the integrated Schottky reduces body RR RR 15.5m V = 4.5V 9.0A GS diode switching losses Low gate capacitance (Q /Q ) ratio reduces risk of shoot- g gs through or cross conduction currents at high frequencies Small form factor thermally efficient package enables higher density end products Occupies just 33% of the board area occupied by SO-8 enabling smaller end product 100% UIS (Avalanche) Rated 100% R Tested g Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability PPAP Capable (Note 4) Description and Applications Mechanical Data This MOSFET is designed to meet the stringent requirements of Automotive applications. It is qualified to AEC-Q101, supported by a Case: PowerDI 3333-8 PPAP and is ideal for use in: Case Material: Molded Plastic,Gree Molding Compound. UL Flammability Classification Rating 94V-0 Backlighting Moisture Sensitivity: Level 1 per J-STD-020 Power Management Functions Terminal Connections Indicator: See Diagram DC-DC Converters Terminals: Finish Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.072 grams (Approximate) Drain Pin 1 S 8 7 6 5 S S G Gate D D D D 1 2 3 4 Source Top View Bottom View Top View Pin Configuration Internal Schematic Ordering Information (Note 5) Part Number Case Packaging DMS3014SFGQ-7 PowerDI3333-8 2000/Tape & Reel DMS3014SFGQ-13 PowerDI3333-8 3000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMS3014SFGQ Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage V 30 V DSS Gate-Source Voltage V 12 V GSS Steady T = +25C 9.5 A I A D State 7.6 T = +70C A Continuous Drain Current (Note 7) V = 10V GS T = +25C 13.0 A t<10s A I D 9.7 T = +70C A Steady T = +25C 9.0 A I A D State 7.4 T = +70C A Continuous Drain Current (Note 7) V = 4.5V GS T = +25C 12.2 A t<10s A I D 9.3 T = +70C A Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) I 80 A DM Maximum Continuous Body Diode Forward Current (Note 7) I 3.0 A S Avalanche Current (Note 8) L = 0.1mH I 30 A AR Repetitive Avalanche Energy (Note 8) L = 0.1mH E 45 mJ AR Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Total Power Dissipation (Note 6) P 1 W D Steady State 131 C/W Thermal Resistance, Junction to Ambient (Note 6) R JA t<10s 72 C/W Total Power Dissipation (Note 7) P 2.1 W D Steady State 63 C/W Thermal Resistance, Junction to Ambient (Note 7) R JA t<10s 35 C/W Thermal Resistance, Junction to Case (Note 7) 7.1 C/W R JC Operating and Storage Temperature Range T T -55 to +150 C J, STG Notes: 6. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 7. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 8. I and E ratings are based on low frequency and duty cycles to keep T = +25C. AR AR J 2 of 8 June 2017 DMS3014SFGQ Diodes Incorporated www.diodes.com Document number: DS39684 Rev. 2 - 2

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Diodes Incorporated may also be referenced as

DIO
Diodes
DIODES INC
DIODES INC / ZETEX
DIODES INC.
Diodes Inc. / Pericom
Diodes Zetex
DiodesZetex
PAM(Diodes Inc)
PER
Pericom
PERICOM SEMI
Pericom Semiconductor
Pericom Technology
Pericom/Diodes
ZTX

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