X-On Electronics has gained recognition as a prominent supplier of STD3NK50ZT4 MOSFETs across the USA, India, Europe, Australia, and various other global locations. STD3NK50ZT4 MOSFETs are a product manufactured by STMicroelectronics. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

STD3NK50ZT4 STMicroelectronics

STD3NK50ZT4 electronic component of STMicroelectronics
STD3NK50ZT4 STMicroelectronics
STD3NK50ZT4 MOSFETs
STD3NK50ZT4  Semiconductors

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See Product Specifications
Part No. STD3NK50ZT4
Manufacturer: STMicroelectronics
Category: MOSFETs
Description: Transistor: N-MOSFET; unipolar; 500V; 1.45A; 45W; DPAK
Datasheet: STD3NK50ZT4 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
203: USD 1.2805 ea
Line Total: USD 259.94 
Availability - 704
Ship by Fri. 09 May to Thu. 15 May
MOQ: 203  Multiples: 1
Pack Size: 1
Availability Price Quantity
704
Ship by Fri. 09 May to Thu. 15 May
MOQ : 203
Multiples : 1
203 : USD 1.2805
250 : USD 1.209
1250 : USD 1.075

   
Manufacturer
Product Category
Technology
Kind Of Package
Mounting
Case
Polarisation
Features Of Semiconductor Devices
Type Of Transistor
Drain-Source Voltage
Drain Current
Gate-Source Voltage
On-State Resistance
Power Dissipation
Category
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the STD3NK50ZT4 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the STD3NK50ZT4 and other electronic components in the MOSFETs category and beyond.

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STD3NK50Z-1, STD3NK50ZT4 Datasheet N-channel 500 V, 2.8 typ., 2.3 A SuperMESH Power MOSFETs in IPAK and DPAK packages Features Order codes V R max. P Package DSS DS(on) TOT TAB TAB STD3NK50Z-1 IPAK 2 3 500 V 3.3 45 W 1 3 STD3NK50ZT4 DPAK 2 IPAK 1 DPAK Extremely high dv/dt capability 100% avalanche tested Gate charge minimized D(2, TAB) Very low intrinsic capacitance Zener-protected G(1) Applications Switching applications S(3) AM01475V1 Description These high-voltage devices are Zener-protected N-channel Power MOSFETs developed using the SuperMESH technology by STMicroelectronics, an optimization of the well-established PowerMESH. In addition to a significant reduction in on-resistance, these devices are designed to ensure a high level of dv/dt capability for the most demanding applications. Product status link STD3NK50Z-1 STD3NK50ZT4 DS3956 - Rev 3 - August 2018 www.st.com For further information contact your local STMicroelectronics sales office.STD3NK50Z-1, STD3NK50ZT4 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Drain-source voltage 500 V DS V Gate-source voltage 30 V GS I Drain current (continuous) at T = 25 C 2.3 A D C I Drain current (continuous) at T = 100 C 1.45 A D C (1) I Drain current (pulsed) 9.2 A DM P Total dissipation at T = 25 C 45 W TOT C (2) dv/dt Peak diode recovery voltage slope 4.5 V/ns ESD Gate-source human body model (C = 100 pF, R = 1.5 k) 2 kV T Operating junction temperature range j -55 to 150 C T Storage temperature range stg 1. Pulse width limited by safe operating area. 2. I 2 A, di/dt 200 A/s, V V . SD DD (BR)DSS Table 2. Thermal data Value Unit Symbol Parameter IPAK DPAK R Thermal resistance junction- case 2.78 C/W thj-case R Thermal resistance junction-ambient 100 C/W thj-amb (1) R Thermal resistance junction-pcb 50 C/W thj-pcb 1. When mounted on an 1-inch FR-4, 2oz Cu board. Table 3. Avalanche characteristics Symbol Parameter Value Unit Avalanche current, repetitive or not-repetitive I 2.3 A AR (pulse width limited by T max) j Single pulse avalanche energy E 120 mJ AS (starting T = 25 C, I = I , V = 50 V) j D AR DD DS3956 - Rev 3 page 2/21

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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