STD7N65M2 STMicroelectronics

STD7N65M2 N-channel 650 V, 0.98 typ., 5 A MDmesh M2 Power MOSFET in a DPAK package Datasheet - production data Features R DS(on) Order code V I DS D max TAB STD7N65M2 650 V 1.15 5 A 3 Extremely low gate charge 1 Excellent output capacitance (C ) profile oss DPAK 100% avalanche tested Zener-protected Applications Switching applications Figure 1. Internal schematic diagram D(2, TAB) Description This device is an N-channel Power MOSFET developed using the MDmesh M2 technology. Thanks to the strip layout associated to an improved vertical structure, the device exhibits both low on-resistance and optimized switching G(1) characteristics. It is therefore suitable for the most demanding high efficiency converters. S(3) AM15572v1 Table 1. Device summary Order code Marking Package Packaging STD7N65M2 7N65M2 DPAK Tape and reel May 2015 DocID026787 Rev 2 1/17 This is information on a product in full production. www.st.comContents STD7N65M2 Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) 6 3 Test circuits 8 4 Package information . 9 4.1 DPAK (TO-252) type A package information . 9 4.2 DPAK (TO-252) type C package information .11 5 Packaging mechanical data 14 6 Revision history . 16 2/17 DocID026787 Rev 2