STD7NM64N STMicroelectronics

STD7NM64N N-channel 640 V, 5 A, 0.88 typ., MDmesh II Power MOSFET in a DPAK package Datasheet - production data Features Order code V R max. I DS DS(on) D STD7NM64N 640 V 1.05 5 A TAB 100% avalanche tested 3 Low input capacitance and gate charge 1 Low gate input resistance DPAK Applications Switching applications Description Figure 1. Internal schematic diagram This device is an N-channel Power MOSFET developed using the second generation of % 7 MDmesh technology. This revolutionary Power MOSFET associates a vertical structure to the companys strip layout to yield one of the worlds lowest on-resistance and gate charge. It is therefore suitable for the most demanding high * efficiency converters. 6 0 Y Table 1. Device summary Order code Marking Packages Packaging STD7NM64N 7NM64N DPAK Tape and reel August 2013 DocID025081 Rev 1 1/16 This is information on a product in full production. www.st.comContents STD7NM64N Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) 6 3 Test circuits 8 4 Package mechanical data . 9 5 Packaging mechanical data 13 6 Revision history . 15 2/16 DocID025081 Rev 1