Product Information

STD80N4F6

STD80N4F6 electronic component of STMicroelectronics

Datasheet
STMicroelectronics MOSFET N-Ch 40V 80A STripFET VI DeepGate
Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

10: USD 2.3239 ea
Line Total: USD 23.24

2425 - Global Stock
Ships to you between
Fri. 24 May to Thu. 30 May
MOQ: 10  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
1125 - WHS 1


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 10
Multiples : 1

Stock Image

STD80N4F6
STMicroelectronics

10 : USD 0.8831
25 : USD 0.8442
100 : USD 0.8388
250 : USD 0.8221

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Qg - Gate Charge
Qualification
Tradename
Series
Brand
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Configuration
Transistor Type
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Category
Brand Category
LoadingGif

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Additional Infomation About Product

STD80N4F6 Automotive-grade N-channel 40 V, 5.5 m typ., 80 A STripFET VI DeepGATE Power MOSFET in a DPAK package Datasheet production data Features Order code V R max I DS DS(on) D TAB STD80N4F6 40 V 6 m 80 A 3 Designed for automotive applications and 1 AEC-Q101 qualified DPAK Low gate charge Very low on-resistance High avalanche ruggedness Figure 1. Internal schematic diagram Applications Switching applications % 7 Description This device is an N-channel Power MOSFET th developed using the 6 generation of STripFET * DeepGATE technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest R in all packages. DS(on) 6 0 Y Table 1. Device summary Order code Marking Package Packaging STD80N4F6 80N4F6 DPAK Tape and reel March 2014 DocID026016 Rev 1 1/16 This is information on a product in full production. www.st.comContents STD80N4F6 Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) 6 3 Test circuits 8 4 Package mechanical data . 9 5 Packaging mechanical data 13 6 Revision history . 15 2/16 DocID026016 Rev 1

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Stmicroelectronics may also be referenced as

C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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