STE60N105DK5 STMicroelectronics

STE60N105DK5 N-channel 1050 V, 0.110 typ., 46 A MDmesh DK5 Power MOSFET in an ISOTOP package Datasheet - production data Features R DS(on) Order code VDS ID PTOT max. STE60N105DK5 1050 V 0.120 46 A 680 W Fast-recovery body diode Best RDS(on) x area Low gate charge, input capacitance and resistance 100% avalanche tested Extremely high dv/dt ruggedness Figure 1: Internal schematic diagram Applications Switching applications Description This very high voltage N-channel Power MOSFET is part of the MDmesh DK5 fast recovery diode series. The MDmesh DK5 combines very low recovery charge (Q ) and rr recovery time (trr) with an excellent improvement in RDS(on) * area and one of the most effective switching behaviors, ideal for half bridge and full bridge converters. Table 1: Device summary Order code Marking Packages Packaging STE60N105DK5 60N105DK5 ISOTOP Tube December 2016 DocID024137 Rev 2 1/13 www.st.com This is information on a product in full production. Prerelease product(s)Contents STE60N105DK5 Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 6 3 Test circuits ..................................................................................... 8 4 Package information ....................................................................... 9 4.1 ISOTOP package information ......................................................... 10 5 Revision history ............................................................................ 12 2/13 DocID024137 Rev 2 Prerelease product(s)