STF10N105K5, STP10N105K5, STW10N105K5 N-channel 1050 V, 1 typ., 6 A MDmesh K5 Power MOSFETs in TO-220, TO-220FP and TO-247 packages Datasheet - production data Features TAB R DS(on) Order codes V I P DS D TOT max. STF10N105K5 30 W 3 3 2 2 1 STP10N105K5 1050 V 1.3 6 A 130 W 1 TO-220 STW10N105K5 130 W TO-220FP Industrys lowest R DS(on) 3 Industrys best figure of merit (FoM) 2 1 Ultra low gate charge TO-247 100% avalanche tested Zener-protected Figure 1: Internal schematic diagram Applications D(2, TAB) Switching applications Description These very high voltage N-channel Power G(1) MOSFETs are designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. Table 1: Device summary S(3) AM01476v1 Order codes Marking Package Packaging STF10N105K5 10N105K5 TO-220FP Tube STP10N105K5 10N105K5 TO-220 Tube STW10N105K5 10N105K5 TO-247 Tube October 2014 DocID026932 Rev 2 1/18 www.st.com This is information on a product in full production. Contents STF10N105K5, STP10N105K5, STW10N105K5 Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 6 3 Test circuits ..................................................................................... 9 4 Package mechanical data ............................................................. 10 4.1 TO-220 package mechanical data .................................................. 11 4.2 TO-247 package mechanical data .................................................. 13 4.3 TO-220FP package mechanical data .............................................. 15 5 Revision history ............................................................................ 17 2/18 DocID026932 Rev 2