STF10N60M2 Datasheet N-channel 600 V, 0.55 typ., 7.5 A MDmesh M2 Power MOSFET in a TO-220FP package Features V at T R max. I Order code DS Jmax. DS(on) D STF10N60M2 650 V 0.60 7.5 A 3 Extremely low gate charge 2 1 Excellent output capacitance (C ) profile oss TO-220FP 100% avalanche tested D(2) Zener-protected Applications G(1) Switching applications Description S(3) AM15572v1 no tab This device is an N-channel Power MOSFET developed using MDmesh M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters. Product status link STF10N60M2 Product summary Order code STF10N60M2 Marking 10N60M2 Package TO-220FP Packing Tube DS9705 - Rev 5 - February 2021 www.st.com For further information contact your local STMicroelectronics sales office.STF10N60M2 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Gate-source voltage 25 V GS Drain current (continuous) at T = 25 C 7.5 C (1) I A D Drain current (continuous) at T = 100 C 4.9 C (2) I Drain current (pulsed) 30 A DM P Total power dissipation at T = 25 C 25 W TOT C (3) dv/dt Peak diode recovery voltage slope 15 V/ns (4) MOSFET dv/dt ruggedness 50 dv/dt (5) V Insulation withstand voltage (RMS) from all three leads to external heat sink 2500 V ISO T Storage temperature range stg -55 to 150 C T Operating junction temperature range j 1. Limited by package. 2. Pulse limited by safe operating area. 3. I 7.5 A, di/dt 400 A/s V peak < V , V = 400 V SD DS (BR)DSS DD 4. V 480 V. DS 5. t = 1 s T = 25 C. C Table 2. Thermal data Symbol Parameter Value Unit R Thermal resistance, junction-to-case 5 thJC C/W R Thermal resistance, junction-to-ambient 62.5 thJA Table 3. Avalanche characteristics Symbol Parameter Value Unit (1) I Avalanche current, repetitive or not repetitive 1.5 A AR (2) E Single pulse avalanche energy 110 mJ AS 1. Pulse width limited by T . jmax 2. Starting T = 25 C, I = I , V = 50 V. j D AR DD DS9705 - Rev 5 page 2/12