Product Information

STF20NM65N

Name: STF20NM65N
Brand: STMicroelectronics
SKU: STF20NM65N_STMicroelectronics
Availability: OutOfStock
Rating: 5 (11 reviews)

STF20NM65N electronic component of STMicroelectronics

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MOSFET N-Channel 650V Pwr Mosfet

Manufacturer: STMicroelectronics

This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

10: USD 1.2588 ea
Line Total: USD 12.59

0 - Global Stock

MOQ: 10 Multiples: 50
Pack Size: 50

More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 - WHS 1 Ships to you between Tue. 14 May to Mon. 20 May MOQ : 1000 Multiples : 1000 STF20NM65N STMicroelectronics	1000 : USD 2.5946

0 - WHS 2 Ships to you between Tue. 14 May to Mon. 20 May MOQ : 10 Multiples : 50 STF20NM65N STMicroelectronics	10 : USD 1.2588 400 : USD 1.1848

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Additional Infomation About Product

STP20NM65N STF20NM65N N-channel 650 V, 0.250 , 15 A TO-220, TO-220FP second generation MDmesh Power MOSFET Features V R DSS DS(on) Order codes I D T max. jmax STP20NM65N 710 V 0.270 15 A STF20NM65N 3 3 100 % avalanche tested 2 2 1 1 Low input capacitance and gate charge TO-220 TO-220FP Low gate input resistance Application Switching applications Figure 1. Internal schematic diagram Description These devices are N-channel Power MOSFETs realized using the second generation MDmesh technology. This revolutionary Power MOSFET associates a new vertical structure to the companys strip layout to yield one of the worlds lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. 3 - V Table 1. Device summary Order codes Marking Package Packaging STP20NM65N 20NM65N TO-220 Tubes STF20NM65N 20NM65N TO-220FP Tubes May 2011 Doc ID 13845 Rev 2 1/16 www.st.com 16Contents STP20NM65N, STF20NM65N Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristecs (curves) . 6 3 Test circuits 9 4 Package mechanical data 10 5 Revision history . 15 2/16 Doc ID 13845 Rev 2

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Stmicroelectronics may also be referenced as

C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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Manufacturer STMicroelectronics STMicroelectronics
Product Category MOSFET MOSFET
RoHS - XON Y Y
Id - Continuous Drain Current 19 A 19 A
Vds - Drain-Source Breakdown Voltage 650 V 650 V
Rds On - Drain-Source Resistance 190 mOhms 190 mOhms
Transistor Polarity N - Channel N - Channel
Vgs - Gate-Source Breakdown Voltage 25 V 25 V
Minimum Operating Temperature - 55 C - 55 C
Maximum Operating Temperature + 150 C + 150 C
Pd - Power Dissipation 40 W 40 W
Mounting Style Through Hole Through Hole
Package / Case TO - 220 - 3 TO - 220 - 3
Packaging Tube Tube
Channel Mode Enhancement Enhancement
Configuration Single Single
Series Stf20nm65n Stf20nm65n
Brand Stmicroelectronics Stmicroelectronics
Fall Time 20 ns 20 ns
Rise Time 10 ns 10 ns
Typical Turn-Off Delay Time 80 ns 80 ns