Product Information

STF20NM65N-Y11

Name: STF20NM65N-Y11
Brand: STMicroelectronics
SKU: STF20NM65NY11_STMicroelectronics
Availability: OutOfStock
Rating: 5 (11 reviews)

STF20NM65N-Y11 electronic component of STMicroelectronics

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Datasheet

650V 15A 250mO@10V,7.5A 30W N Channel TO-220 MOSFETs ROHS

Manufacturer: STMicroelectronics

This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

1: USD 2.7136 ea
Line Total: USD 2.71

0 - Global Stock

MOQ: 1 Multiples: 1
Pack Size: 1

More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 - WHS 1 Ships to you between Fri. 31 May to Wed. 05 Jun MOQ : 1 Multiples : 1 STF20NM65N-Y11 STMicroelectronics	1 : USD 2.6614 10 : USD 1.8776 30 : USD 1.3021 100 : USD 1.1829 500 : USD 1.0925 1000 : USD 1.0687

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Additional Infomation About Product

The STF20NM65N-Y11 is a MOSFET manufactured by STMicroelectronics. It is an N-Channel TO-220 type MOSFET with a voltage rating of 650V and a continuous drain current of 15A. Its on-state resistance is 250mO@10V, and its continuous drain power dissipation is 30W. It is compliant with ROHS certification and uses the STF20NM65N-Y11 configuration.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Stmicroelectronics may also be referenced as

C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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Manufacturer STMicroelectronics STMicroelectronics
Product Category MOSFET MOSFET
Category MOSFET MOSFET
Rohs y y
Package TO - 220FP TO - 220FP
Brand Category Stmicroelectronics Stmicroelectronics
Fet Type - -
Drain To Source Voltagevdss - -
Continuous Drain Current Id @ 25°C - -
Vgsth Max @ Id - -
Rds On Max @ Id Vgs - -
Power Dissipation-Max Ta 25°C - -
Drain Source Voltage Vdss 650 V 650 V
Continuous Drain Current Id 15 A 15 A
Drain Source On Resistance Rdson@Vgs Id 250 mOhms @10V , 7.5A 250 mOhms @10V , 7.5A
Power Dissipation Pd 30 W 30 W
Gate Threshold Voltage Vgsth@Id 3 V @250uA 3 V @250uA
Reverse Transfer Capacitance Crss@Vds 10 pF @50V 10 pF @50V
Type N Channel N Channel
Input Capacitance Ciss@Vds 1.28 nF @50V 1.28 nF @50V
Total Gate Charge Qg@Vgs 44 nC @10V 44 nC @10V
Operating Temperature + 150 C @ (Tj) + 150 C @ (Tj)