Product Information

TSP8N60M

TSP8N60M electronic component of Truesemi

Datasheet
MOSFET N Channel 600V 7.5A(Tc) 4V @ 250uA 1.2O @ 3.75A,10V TO-220 RoHS

Manufacturer: Truesemi
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.4579 ea
Line Total: USD 0.46

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between
Fri. 17 May to Wed. 22 May

MOQ : 1
Multiples : 1

Stock Image

TSP8N60M
Truesemi

1 : USD 0.4725
10 : USD 0.3833
50 : USD 0.3449
100 : USD 0.2973
500 : USD 0.2381
1000 : USD 0.2255

     
Manufacturer
Product Category
Category
Rohs
Package
Brand Category
Fet Type
Drain To Source Voltagevdss
Continuous Drain Current Id @ 25°C
Vgsth Max @ Id
Rds On Max @ Id Vgs
Power Dissipation-Max Ta 25°C
Drain Source Voltage Vdss
Continuous Drain Current Id
Power Dissipation Pd
Drain Source On Resistance Rdson@Vgs Id
Gate Threshold Voltage Vgsth@Id
Type
LoadingGif

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The TSP8N60M is a robust N-channel MOSFET with 600V drain-source voltage and 7.5A (Tc) continuous drain current. Constructed with a 3-terminal TO-220 RoHS package, it is suitable for applications such as the switching or amplifying of high-voltage signals. The device features an RDS(on) of 4V @ 250uA and 1.2Ohm @ 3.75A, 10V. It is manufactured by Truesemi.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

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