STD3NK100Z, STF3NK100Z Datasheet N-channel 1000 V, 5.4 typ., 2.5 A SuperMESH Power MOSFETs in DPAK and TO-220FP packages Features Order code V R max. I Package DS DS(on) D STD3NK100Z DPAK 1000 V 6 2.5 A STF3NK100Z TO-220FP Extremely high dv/dt capability 100% avalanche tested Gate charge minimized D(2, TAB) Very low intrinsic capacitance Zener-protected G(1) Applications Switching applications S(3) AM01475V1 Description These high-voltage devices are Zener-protected N-channel Power MOSFETs developed using the SuperMESH technology by STMicroelectronics, an optimization of the well-established PowerMESH. In addition to a significant reduction in on-resistance, these devices are designed to ensure a high level of dv/dt capability for the most demanding applications. Product status link STD3NK100Z STF3NK100Z DS5252 - Rev 3 - July 2018 www.st.com For further information contact your local STMicroelectronics sales office.STD3NK100Z, STF3NK100Z Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Value Symbol Parameter Unit DPAK TO-220FP V Drain-source voltage 1000 V DS V Gate-source voltage 30 V GS (1) I Drain current (continuous) at T = 25 C 2.5 2.5 A D C (1) I Drain current (continuous) at T = 100 C 1.57 1.57 A D C (2) I Drain current (pulsed) 10 10 A DM P Total dissipation at T = 25 C 90 25 W TOT C ESD Gate-source human body model (C = 100 pF, R = 1.5 k) 3 kV (3) dv/dt Peak diode recovery voltage slope 4.5 V/ns Insulation withstand voltage (RMS) from all three leads to external V 2.5 kV ISO heat sink (t = 1 s T = 25C) C T Operating junction temperature range j -55 to 150 C T Storage temperature range stg 1. Limited by maximum junction temperature. 2. Pulse width limited by safe operating area. 3. I 2.5 A, di/dt 200 A/s, V = 80% V . SD DD (BR)DSS Table 2. Thermal data Value Symbol Parameter Unit DPAK TO-220FP R Thermal resistance junction-case 1.39 5 thj-case (1) R Thermal resistance junction-pcb 50 C/W thj-pcb R Thermal resistance junction-ambient 62.5 thj-amb 1. When mounted on FR-4 board of 1 inch, 2 oz Cu. Table 3. Avalanche characteristics Symbol Parameter Value Unit (1) I Avalanche current, repetitive or not-repetitive 2.5 A AR (2) E Single pulse avalanche energy 110 mJ AS 1. Pulse width limited by T . jmax 2. Starting T = 25C, I = I , V = 50 V. j D AR DD DS5252 - Rev 3 page 2/22