STF8NM50N STMicroelectronics

STF8NM50N N-channel 500 V, 0.73 , 5 A MDmeshII Power MOSFET in TO-220FP Features Order codes V T R max. I DSS JMAX DS(on) D STF8NM50N 550 V < 0.79 5 A 100% avalanche tested Low input capacitances and gate charge 3 2 1 Low gate input resistance TO-220FP Applications Switching applications Description This device is an N-channel Power MOSFET Figure 1. Internal schematic diagram developed using the second generation of MDmesh technology. This revolutionary Power MOSFET associates a vertical structure to the companys strip layout to yield one of the worlds lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. 3 - V Table 1. Device summary Order codes Marking Packages Packaging STF8NM50N 8NM50N TO-220FP Tube November 2011 Doc ID 022505 Rev 2 1/12 www.st.com 12 Contents STF8NM50N Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) 6 3 Test circuits 8 4 Package mechanical data . 9 5 Revision history . 11 2/12 Doc ID 022505 Rev 2