Product Information

STF7N60M2

STF7N60M2 electronic component of STMicroelectronics

Datasheet
STMicroelectronics MOSFET N-CH 600V 0.86Ohm 5A MDmesh M2
Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

90: USD 0.725 ea
Line Total: USD 65.25

87 - Global Stock
Ships to you between
Fri. 31 May to Wed. 05 Jun
MOQ: 90  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
61 - WHS 1


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 1
Multiples : 1

Stock Image

STF7N60M2
STMicroelectronics

1 : USD 2.08
10 : USD 1.729
100 : USD 1.378
500 : USD 1.1856
1000 : USD 0.9919

87 - WHS 2


Ships to you between
Fri. 31 May to Wed. 05 Jun

MOQ : 90
Multiples : 1

Stock Image

STF7N60M2
STMicroelectronics

90 : USD 0.725

5 - WHS 3


Ships to you between
Fri. 31 May to Wed. 05 Jun

MOQ : 1
Multiples : 1

Stock Image

STF7N60M2
STMicroelectronics

1 : USD 1.8409
10 : USD 1.8013
50 : USD 1.7738
100 : USD 1.7461

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Tradename
Configuration
Series
Brand
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Transistor Type
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
LoadingGif

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Additional Infomation About Product

The STF7N60M2 is an N-channel Power MOSFET transistor from STMicroelectronics. It is capable of operating at 600V with a 0.86 ohm resistor and has a maximum current rating of 5A (at 25°C). It is built on a special insulated-gate DMOS (MDmesh M2) structure and is designed for low on-state resistance and fast switching speed. Additionally, it is also designed to have best-in-class static and dynamic dv/dt performance as well as avalanche energy rating. This MOSFET is ideal for use in motor control, switching mode power supplies, and other applications requiring high power and fast switching ability.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Stmicroelectronics may also be referenced as

C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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