Product Information

STGP10M65DF2

STGP10M65DF2 electronic component of STMicroelectronics

Datasheet
STMicroelectronics IGBT Transistors
Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

20: USD 0.6742 ea
Line Total: USD 13.48

255 - Global Stock
Ships to you between
Mon. 27 May to Fri. 31 May
MOQ: 20  Multiples: 1
Pack Size: 1

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255 - WHS 1


Ships to you between Mon. 27 May to Fri. 31 May

MOQ : 1
Multiples : 1

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STGP10M65DF2
STMicroelectronics

1 : USD 0.6006
10 : USD 0.5529
100 : USD 0.5419
1000 : USD 0.5419
2000 : USD 0.5419

48 - WHS 2


Ships to you between Mon. 27 May to Fri. 31 May

MOQ : 22
Multiples : 1

Stock Image

STGP10M65DF2
STMicroelectronics

22 : USD 1.8525
50 : USD 1.8362

255 - WHS 3


Ships to you between Mon. 27 May to Fri. 31 May

MOQ : 20
Multiples : 1

Stock Image

STGP10M65DF2
STMicroelectronics

20 : USD 0.6742
100 : USD 0.6522
1000 : USD 0.5821
2000 : USD 0.5359

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Additional Infomation About Product

STGP10M65DF2 Trench gate field-stop IGBT, M series 650 V, 10 A low-loss in TO-220 package Datasheet - production data Features 6 s of short-circuit withstand time V = 1.55 V (typ.) I = 10 A CE(sat) C TAB Tight parameter distribution Safer paralleling Positive V temperature coefficient CE(sat) Low thermal resistance 3 Soft and very fast recovery antiparallel diode 2 1 Maximum junction temperature: TJ = 175 C TO-220 Applications Motor control UPS Figure 1: Internal schematic diagram PFC General purpose inverter Description This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where low-loss and short-circuit functionality are essential. Furthermore, the positive V temperature coefficient and tight CE(sat) parameter distribution result in safer paralleling operation. Table 1: Device summary Order code Marking Package Packing STGP10M65DF2 G10M65DF2 TO-220 Tube April 2017 DocID027352 Rev 5 1/17 www.st.com This is information on a product in full production. Contents STGP10M65DF2 Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 6 3 Test circuits ................................................................................... 12 4 Package information ..................................................................... 13 4.1 TO-220 type A package information ................................................ 14 5 Revision history ............................................................................ 16 2/17 DocID027352 Rev 5

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Stmicroelectronics may also be referenced as

C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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