Product Information

STP10N80K5

STP10N80K5 electronic component of STMicroelectronics

Datasheet
MOSFET PTD HIGH VOLTAGE

Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 3.9695 ea
Line Total: USD 3.97

145 - Global Stock
Ships to you between
Thu. 30 May to Tue. 04 Jun
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
145 - WHS 1


Ships to you between
Thu. 30 May to Tue. 04 Jun

MOQ : 1
Multiples : 1

Stock Image

STP10N80K5
STMicroelectronics

1 : USD 3.8473
10 : USD 3.3765
50 : USD 3.0968
100 : USD 2.8131
500 : USD 2.6811
1000 : USD 2.624

     
Manufacturer
Product Category
Category
Rohs
Package
Brand Category
Fet Type
Drain To Source Voltagevdss
Continuous Drain Current Id @ 25°C
Vgsth Max @ Id
Rds On Max @ Id Vgs
Power Dissipation-Max Ta 25°C
Drain Source Voltage Vdss
Continuous Drain Current Id
Drain Source On Resistance Rdson@Vgs Id
Power Dissipation Pd
Gate Threshold Voltage Vgsth@Id
Reverse Transfer Capacitance Crss@Vds
Type
Input Capacitance Ciss@Vds
Total Gate Charge Qg@Vgs
LoadingGif

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The STP10N80K5 with MOSFET PTD HIGH VOLTAGE is a FET (Field Effect Transistor) designed and manufactured by STMicroelectronics. It has an 8th-order symmetrical mesa structure with a very high channels breakdown voltage (BVdss)of 800V. It features fast switching speed and an exceptionally low on-resistance of 0.06 ohm, making it ideal for use in high performance power switching applications. It has an 8th-order symmetrical mesa structure, making it suitable for high voltage applications. It has an effective channel region width of 25 um, allowing it to withstand greater amounts of stress. The STP10N80K5 is RoHS compliant, making it safe for use in a variety of environments.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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