STP165N10F4 STMicroelectronics

STP165N10F4 electronic component of STMicroelectronics
STP165N10F4 STMicroelectronics
STP165N10F4 MOSFETs
STP165N10F4 Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of STP165N10F4 MOSFETs across the USA, India, Europe, Australia, and various other global locations. STP165N10F4 MOSFETs are a product manufactured by STMicroelectronics. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No.STP165N10F4
Manufacturer:STMicroelectronics
Category:MOSFETs
Description:N-Channel 100 V 120A (Tc) 315W (Tc) Through Hole TO-220
Datasheet:STP165N10F4 Datasheet (PDF)
Shipping Charges:Click here for details
AI Image
Price (USD)
N/A

Obsolete

 STP165N10F4 More Buying Options & Price Grid(s)

Availability0
MOQ : 10
Multiples : 1
QtyUnit Price
10$ 3.5619
25$ 3.43
100$ 3.43
250$ 3.298
1000$ 3.298
N/A

Obsolete
Availability0
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 6.963
10$ 4.56
25$ 4.308
100$ 3.732
500$ 3.18
1000$ 2.784
N/A

Obsolete
Availability0
MOQ : 6
Multiples : 1
QtyUnit Price
6$ 3.2942
10$ 2.8269
25$ 2.5054
100$ 2.4553
N/A

Obsolete

Specifications

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Tradename
Configuration
Series
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Gate Charge Qg
Factory Pack Quantity :
Transistor Type
Type
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the STP165N10F4 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the STP165N10F4 and other electronic components in the MOSFETs category and beyond.

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Additional Infomation About Product

STP165N10F4 N-channel 100 V, 4.4 m, 120 A TO-220 STripFET DeepGATE Power MOSFET Features Order code V R max I DSS DS(on) D STP165N10F4 100 V < 5.5 m 120 A N-channel enhancement mode 3 100% avalanche rated 2 1 Low gate charge TO-220 Very low on-resistance Application Switching applications Figure 1. Internal schematic diagram Description The STP165N10F4 is an N-channel enhancement mode Power MOSFET built with STripFET DeepGATE technology with a new gate structure. The product is tailored to minimize on-resistance. 3 - V Table 1. Device summary Order code Marking Package Packaging STP165N10F4 165N10F4 TO-220 Tube November 2010 Doc ID 15781 Rev 2 1/12 www.st.com 12 Contents STP165N10F4 Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) 6 3 Test circuits 8 4 Package mechanical data . 9 5 Revision history . 11 2/12 Doc ID 15781 Rev 2

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

C-Maxmay also be referenced as

C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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