STP160N3LL STMicroelectronics

STP160N3LL N-channel 30 V, 2.5 m typ., 120 A STripFET H6 Power MOSFET in a TO-220 package Datasheet - production data Features Order code V R max. I P DS DS(on) D TOT STP160N3LL 30 V 3.2 m 120 A 136 W Very low on-resistance Very low gate charge High avalanche ruggedness Low gate drive power loss Applications Switching applications Figure 1: Internal schematic diagram Description This device is an N-channel Power MOSFET developed using the STripFET H6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low R in all DS(on) packages. Table 1: Device summary Order code Marking Package Packing STP160N3LL 160N3LL TO-220 Tube June 2015 DocID025073 Rev 3 1/13 www.st.com This is information on a product in full production. Contents STP160N3LL Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 6 3 Test circuits ..................................................................................... 8 4 Package information ....................................................................... 9 4.1 TO-220 type A package information ................................................ 10 5 Revision history ............................................................................ 12 2/13 DocID025073 Rev 3