STP36N60M6 STMicroelectronics

STP36N60M6, STW36N60M6 N-channel 600 V, 85 m typ., 30 A MDmesh M6 Power MOSFETs in TO-220 and TO-247 packages Datasheet - production data Features TAB Order code V R max. I DS DS(on) D STP36N60M6 600 V 99 m 30 A STW36N60M6 3 3 Reduced switching losses 2 2 1 Lower RDS(on) x area vs previous generation 1 Low gate input resistance 100% avalanche tested TO-247 TO-220 Zener-protected Applications Figure 1: Internal schematic diagram Switching applications Description The new MDmesh M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of SJ MOSFETs. STMicroelectronics builds on the previous generation of MDmesh devices through its new M6 technology, which combines excellent R * area improvement with one of the most DS(on) effective switching behaviors available, as well as a user-friendly experience for maximum end- application efficiency. Table 1: Device summary Order code Marking Package Packaging STP36N60M6 TO-220 36N60M6 Tube STW36N60M6 TO-247 March 2017 DocID028429 Rev 3 1/16 www.st.com This is information on a product in full production. Contents STP36N60M6, STW36N60M6 Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 6 3 Test circuits ..................................................................................... 9 4 Package information ..................................................................... 10 4.1 TO-220 type A package information ................................................ 11 4.2 TO-247 package information ........................................................... 13 5 Revision history ............................................................................ 15 2/16 DocID028429 Rev 3