LOTNo. LOTNo. MCH3479 Power MOSFET www.onsemi.com 20V, 64m , 3.5A, Single N-Channel Features V R (on) Max I DSS DS D Max Low On-Resistance 64m 4.5V 1.8V Drive 20V 95m 2.5V 3.5A ESD Diode-Protected Gate 149m 1.8V Pb-Free, Halogen Free and RoHS Compliance Specifications Electrical Connection N-Channel Absolute Maximum Ratings at Ta = 25C Unit Parameter Symbol Value 3 Drain to Source Voltage V 20V DSS Gate to Source Voltage V 12 V GSS Drain Current (DC) I 3.5A D Drain Current (Pulse) 1 1:Gate A I 14 DP 2:Source PW10s, duty cycle1% 3:Drain Power Dissipation When mounted on ceramic substrate P 0.9W D 2 2 (900mm 0.8mm) C Junction Temperature Tj 150 C Storage Temperature Tstg 55 to +150 Packing Type : TL Marking Thermal Resistance Ratings FL Parameter Symbol Value Unit Junction to Ambient TL C/W When mounted on ceramic substrate R 138.8 JA 2 (900mm 0.8mm) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. ORDERING INFORMATION See detailed ordering and shipping information on page 5 of this data sheet. Semiconductor Components Industries, LLC, 2015 1 Publication Order Number : March 2015 - Rev. 1 MCH3479/D MCH3479 Electrical Characteristics at Ta = 25C Value Parameter Symbol Conditions Unit min typ max Drain to Source Breakdown Voltage V( ) I =1mA, V=0V 20 V BR DSS D GS Zero-Gate Voltage Drain Current I V =20V, V=0V 1 A DSS DS GS Gate to Source Leakage Current I V =8V, V=0V 10 A GSS GS DS Gate Threshold Voltage V(th) V =10V, I=1mA 0.4 1.3V GS DS D Forward Transconductance g V =10V, I=1.5A 2.8 S FS DS D R(on)1 I =1.5A, V=4.5V 49 64m DS D GS Static Drain to Source On-State Resistance R(on)2 I =1A, V=2.5V 68 95m DS D GS R(on)3 I =0.5A, V=1.8V 99 149m DS D GS Input Capacitance Ciss 260 pF Output Capacitance Coss V =10V, f=1MHz 65 pF DS Reverse Transfer Capacitance Crss 50 pF Turn-ON Delay Time t (on) 6.2 ns d Rise Time t 19 ns r See specified Test Circuit Turn-OFF Delay Time t (off) 30 ns d Fall Time t 28 ns f Total Gate Charge Qg 2.8 nC Gate to Source Charge Qgs V =10V, V =4.5V, I =3.5A 0.6 nC DS GS D Gate to Drain Miller Charge Qgd 0.9 nC Forward Diode Voltage V I =3.5A, V=0V 0.85 1.2V SD S GS Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. Switching Time Test Circuit V V =10V IN DD 4.5V 0V I =1.5A D V IN R =6.7 L D V OUT PW=10s D.C.1% G MCH3479 P.G 50 S www.onsemi.com 2