STPS30M60C Power Schottky rectifier Features A1 K High current capability A2 Avalanche rated K K Low forward voltage drop High frequency operation A2 A2 K Description A1 A1 2 2 D PAK I PAK The STPS30M60C is a dual diode Schottky STPS30M60CG-TR STPS30M60CR rectifier, suited for high frequency switch mode power supply. K 2 2 Packaged in TO-220AB, I PAK and D PAK, this device is intended to be used in notebook, game station and desktop adapters, providing in these A2 applications a good efficiency at both low and K A1 high load. TO-220AB STPS30M60CT Table 1. Device summary Symbol Value (a) Figure 1. Electrical characteristics I 2 x 15 A F(AV) V 60 V RRM I V V (typ) 0.380 VForwar F I 2 x I T (max) 150 C O X j IF I O X VRRM V V AR R V I R V V V V To F(Io) F F(2xIo)Revers I AR a. V and I must respect the reverse safe ARM ARM operating area defined in Figure 12. V and I are AR AR pulse measurements (t < 1 s). V , I , V and V , p R R RRM F are static characteristics November 2011 Doc ID 022020 Rev 1 1/10 www.st.com 10Characteristics STPS30M60C 1 Characteristics Table 2. Absolute ratings (limiting values, per diode, at T = 25 C unless amb otherwise specified) Symbol Parameter Value Unit V Repetitive peak reverse voltage 60 V RRM I Forward rms current 60 A F(RMS) T = 135 C Per diode 15 c I Average forward current, = 0.5 A F(AV) T = 135 C Per device 30 c I Surge non repetitive forward current t = 10 ms sine-wave 400 A FSM p (1) P Repetitive peak avalanche power T = 25 C, t = 1 s 17600 W ARM j p Maximum repetitive peak (2) V t < 1 s, T < 150 C, I < 66 A 80 V ARM p j AR avalanche voltage Maximum single-pulse (2) V t < 1 s, T < 150 C, I < 66 A 80 V ARM p j AR peak avalanche voltage T Storage temperature range -65 to +175 C stg (3) T Maximum operating junction temperature 150 C j 1. For temperature or pulse time duration deratings, please refer to Figure 4 and 5. More details regarding the avalanche energy measurements and diode validation in the avalanche are provided in the application notes AN1768 and AN2025. 2. See Figure 12 dPtot 1 3. < condition to avoid thermal runaway for a diode on its own heatsink Rth(j-a) dTj Table 3. Thermal parameters Symbol Parameter Value Unit per diode 1.3 R Junction to case C/W th(j-c) total 0.73 R Coupling 0.15 C/W th(c) When the two diodes 1 and 2 are used simultaneously: T (diode 1) = P(diode 1) x R (Per diode) + P(diode 2) x R j th(j-c) th(c) 2/10 Doc ID 022020 Rev 1